Systematic investigation of terahertz-induced excitonic Rabi splitting

Abstract

Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intra-excitonic heavy-hole 1s-2p transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.

Room Temperature Terahertz Electroabsorption Modulation by Excitons in Monolayer Transition Metal Dichalcogenides

“…Yet, still unexplored are the nonlinear optical effects that excitons in TMDs show in response to an intense perturbation at terahertz (THz) frequencies. Unlike in semiconductors with weakly bound excitons, , THz fields interacting with monolayer TMDs cannot excite intraexcitonic transitions, as the latter lie at considerably higher energies . Conceptually, THz excitation bridges the gap between dc electroabsorption (so far investigated only in the transverse configuration accessible in field effect transistors , ) and the coherent phenomena mentioned above.…”

Terahertz Spectroscopy of Semiconductor Microcavity Lasers I: Photon Lasers

“…Terahertz and far-infrared radiation have been used in a wide range of spectroscopic measurements 54 , including the observation of intra-excitonic and intraband transitions in semiconductors [55][56][57][58][59][60][61] , analysis of polariton condensates 25 , charge carrier dynamics 62,63 , nonlinear terahertz spectroscopy 64 , detection of Berry curvatures 65 , and the spectroscopy of graphene 66,67 and non-crystalline materials 68 . Furthermore, terahertz gain and stimulated emission as a result of intra-excitonic transitions (3p-2s, 2p-1s) have been shown in Refs.…”

Textured semiconductors for enhanced photoconductive terahertz emission

“…The frequencies from 0.1-10 THz (or wavelengths from 30-3,000 μm) define the THz spectrum and have received considerable attention in past decades [5][6][7][8][9]. Technologies involving THz radiation have provided numerous advancements in applications of applied science, e.g., tomography [10], characterization of semiconductors [11,12], security [13], and many biomedical applications, e.g., medical imaging [14], medical diagnosis [15], and analyses of DNA [16]. The development of the above applications in past years has run in parallel with advancements in THz detection and generation.…”