Systematic investigation of the reactive ion beam sputter deposition process of SiO2

Mateev, Maria; Lautenschläger, Thomas; Spemann, D.; Finzel, Annemarie; Gerlach, Jürgen W.; Frost, Frank; Bundesmann, Carsten

doi:10.1140/epjb/e2018-80453-x

Cited by 20 publications

(9 citation statements)

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“…Typically, high refractive indices (n > 1.48) and dense films (ρ > 2.3 g cm −3 ) can be obtained for SiO 2 deposited by ion beam sputter deposition (IBSD). 92 For these films, the refractive index depends also on the gas type used for the bombardment (Ar or Xe) and on the properties of the impinging species (e.g. ion energy and ion incidence angle).…”

Section: Optical Propertiesmentioning

confidence: 99%

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

et al. 2020

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Section: Optical Propertiesmentioning

confidence: 99%

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

et al. 2020

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“…In principle, the discussed trends and effects may also be applicable to other materials. Due to great technological relevance, future measurements in the presence of oxygen will complement the current and recent studies of SiO 2 films made with IBSD 16 .…”

Section: Discussionmentioning

confidence: 89%

“…At the same time, the influence of scattered primary ions was usually neglected. In recent works, it was shown that these ions can have high energy and a large impact on thin film properties 15,16 .…”

Section: Introductionmentioning

confidence: 99%

Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions

Kalanov

Anders

Bundesmann

2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardment with noble gas ions. The energy distributions in dependence on ion beam parameters (ion energy: 0.5 -1 keV; ion species: Ne, Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle, scattering angle) are measured by means of energy-selective mass spectrometry. The presence of anisotropic effects due to direct sputtering and scattering is discussed and correlated with process parameters. The experimental results are compared to calculations based on a simple elastic binary collision model and to simulations using the Monte-Carlo code SDTrimSP. The influence of the contribution of implanted primary ions on energy distributions of sputtered and scattered particles is studied in simulations. It is found that a 10% variation of the target composition leads to detectable but small differences in the energy distributions of scattered ions. Comparison with previously reported data for other ion/target configurations confirms the presence of similar trends and anisotropic effects: the number of high-energy sputtered ions increases with increasing energy of incident ions and decreasing scattering angle. The effect of the ion/target mass ratio is additionally investigated. Small differences are observed with the change of the primary ion species: the closer the mass ratio to unity, the higher the average energy of sputtered ions. The presence of peaks, assigned to different mechanisms of direct scattering, strongly depends on the ion/target mass ratio. a)

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“…Deshalb wurden am Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM) in den vergangenen Jahren umfangreiche, systematische Untersuchungen zum Ionenstrahlzerstäuben an verschiedenen Materialsystemen durchgeführt: Ag (Metall, [7,8]), Ge (Halbleiter, [9,10]), TiO 2 (Dielektrikum, [11,[13][14][15][16]) oder SiO 2 (Dielektrikum, [17,18]…”

Section: Ion Beam Sputter Deposition -Fundamentals and Application Founclassified

Schichtabscheidung mittels Ionenstrahlzerstäuben

Bundesmann

2019

Vak Forsch Prax

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Summary Ion Beam Sputter Deposition – Fundamentals and Application for Tailoring Thin Film Properties Ion beam sputter deposition (IBSD) is a PVD technique, which, in comparison to other PVD techniques, is known to produce thin films with desirable properties, for instance, with improved adhesion, dense film structure, less defects, higher purity, less particle contamination, and better controlled composition. Recent systematic and comprehensive investigations of the fundamentals of the whole IBSD process revealed previously unemployed opportunities for tailoring thin film properties over a wide range. The main process parameters were identified to be the scattering geometry and the ion species, or, to be more precise, the mass of the primary ion relative to the mass of the target particle. By choosing these parameters appropriately, structural, optical or electrical properties, to name but a few, can be adjusted according to the technological requirements. The present contribution aims on illustrating these opportunities by presenting the main fundamentals and selected examples.

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Systematic investigation of the reactive ion beam sputter deposition process of SiO2

Cited by 20 publications

References 50 publications

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: an experimental and computational study

Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions

Schichtabscheidung mittels Ionenstrahlzerstäuben

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