2004
DOI: 10.1016/j.ccr.2004.02.008
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Systematic investigation of the role of compact TiO2 layer in solid state dye-sensitized TiO2 solar cells

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Cited by 274 publications
(216 citation statements)
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“…Through the series of parallel comparisons, it can be inferred that SnO 2 as ETL material possesses both electrical and optical advantages. In principle, the underlayer of ETL in M-PSCs ought to be compact and pin-hole free so as to retard charge recombination and play the role of hole-blocking effectively [33]. If so, some samples with FTO being covered incompletely by SnO 2 in this work are supposed to be undesirable.…”
Section: Resultsmentioning
confidence: 99%
“…Through the series of parallel comparisons, it can be inferred that SnO 2 as ETL material possesses both electrical and optical advantages. In principle, the underlayer of ETL in M-PSCs ought to be compact and pin-hole free so as to retard charge recombination and play the role of hole-blocking effectively [33]. If so, some samples with FTO being covered incompletely by SnO 2 in this work are supposed to be undesirable.…”
Section: Resultsmentioning
confidence: 99%
“…The positive effect of the TiO 2 blocking layer is rather small as the reduction of triiodide is already rather slow on bare FTO electrodes. When other redox couples are used, however, such as Co-complexes [8,9] and ferrocene / ferrocenium [10], and when solid hole conductors, such as spiro-MeOTAD [2,11], CuSCN [12] and CuI [13] are used instead of an I -/I 3 -electrolyte, the presence of a blocking layer is essential to obtain a functioning DSC.…”
mentioning
confidence: 99%
“…The majority of investigations deal, however, with TiO 2 blocking layers prepared by various methods. Spray pyrolysis is most commonly used, [4][5][6][7]11] but also sol-gel techniques, screen-printing [16], radio frequency magnetron sputtering of Ti followed by oxidation [17] and reactive sputtering of TiO 2 [18][19][20] have been applied.…”
mentioning
confidence: 99%
“…For ss-DSSCs instead, Peng et al showed, that a hole blocking layer is an indispensable component, as scarcely any output power could be obtained for these cells without any blocking layer on the FTO. The short circuit current (I sc ) was below 10 -7 A/cm² and the open circuit potential (Voc) was less than 1mV [124]. This is due to the formation of an ohmic contact between spiro-MeOTAD and the FTO.…”
Section: Tio2 Nanoparticlesmentioning
confidence: 95%