Systematic investigations on doping dependent thermal transport properties of single crystal silicon by time-domain thermoreflectance measurements

Fan, Xuanhui; Zhang, Zhong-Yin; Zhu, Jie; Yuan, Kunpeng; Zhou, Jing; Zhang, Xiaoliang; Tang, Dawei

doi:10.1016/j.ijthermalsci.2022.107558

Cited by 14 publications

(4 citation statements)

References 40 publications

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“…These results are shown in Table 2. The measured values for TBC Al/sapphire , 26 Λ sapphire , 27 TBC Al/Si , 26,28 Λ Si , 28 and Λ SiO2 29 are in good agreement with previously reported values. Since the measured reference samples correspond well with the previously reported values and the reference values span the range of values that are measured for the AlN samples, the TDTR measurements can be considered accurate.…”

Section: ■ Materials and Methodssupporting

confidence: 92%

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Nieminen,

Koskinen,

Kornienko

et al. 2024

ACS Appl. Electron. Mater.

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Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO 2 ), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO 2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO 2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO 2 /aluminum−oxygen−nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m −1 K −1 and the TBC of both interfaces at roughly 100 MW m −2 K −1 . These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.

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Section: ■ Materials and Methodssupporting

confidence: 92%

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Nieminen,

Koskinen,

Kornienko

et al. 2024

ACS Appl. Electron. Mater.

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“…In the Al/Ni/(H-)Gr/Ni/Si system, most of the parameters can be either obtained from the literature or independently measured. For instance, the t of the Al film ( t Al ) was measured by picosecond acoustics, , and the k of the Al ( k Al ) and Ni ( k Ni ) films was estimated using a four-point probe method and the Wiedemann–Franz law. , The ITC between Ni films and the Si substrate ( G Ni/Si ) was measured to be 200 MW/m 2 K using an Al/Ni/Si reference sample. What remains to be fitted is G Al/Ni and G Ni/(H‑)Gr/Ni , a total G consisting of G Ni/(H‑)Gr , G Gr , and G (H‑)Gr/Ni .…”

Section: Methodsmentioning

confidence: 99%

“…The incomplete research on the electron contributions and N dependence on the interfacial thermal transport across metal–Gr is due to the obstacle of the sample preparation and characterization of the ITC between nanofilms. Time-domain thermoreflectance (TDTR), a robust and powerful pump–probe optical technique, is ideal to characterize the various thermophysical properties of a broad scope of materials, − especially the ITC between nanofilms. In this work, the ITC of Ni/(H-)Gr/Ni with different number of Gr layers (1 ≤ N ≤ 7) were measured.…”

Section: Introductionmentioning

confidence: 99%

Graphene Layer Number-Dependent Heat Transport across Nickel/Graphene/Nickel Interfaces

Zhou

Yang

et al. 2022

ACS Appl. Mater. Interfaces

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As a typical two-dimensional material, graphene (Gr) has shown great potential to be used in thermal management applications due to its ultrahigh in-plane thermal conductivity (k). However, low interface thermal conductance (ITC) between Gr and metals to a large extent limits the effective heat dissipation in Gr-based devices. Therefore, having a deep understanding on heat transport at Gr–metal interfaces is essential. Because of the semimetallic nature of Gr, electrons would possibly play a role in the heat transport across Gr–metal interfaces as heat carriers, whereas, However, how much the electron can participate in this process and how to optimize the total ITC considering both electron and phonon transportations have not yet been revealed yet. Therefore, in this work, hydrogenation-treated Gr (H-Gr) was sandwiched by nickel (Ni) nanofilms to compare with the samples containing pure Gr for investigating the interfacial electron behaviors. Moreover, both Gr and H-Gr sets of the samples were prepared with different layer numbers (N) ranging from 1 to 7, and the corresponding ITC was systematically studied based on both time-domain thermoreflectance measurements and theoretical calculations. We found that a larger ITC can be obtained when N is low, and the ITC may reach a peak value when N is 2 in certain circumstances. The present findings not only provide a comprehensive understanding on heat transport across Gr-metal interfaces byconsidering a combined effect of the interfacial interaction strength, phonon mode mismatch, and electron contributions, but also shed new lights on interface strucure optimiazations of Gr-based devices.

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“…Compared with Si, Ge has larger electron and hole mobility, a narrower band-gap (0.67 eV) as well as high phonon responsivity in the near-infrared region [8][9][10], which is beneficial to fabricate Ge-based photodetectors and Ge-based thin film transistor (TFT) with good device performance [11][12][13][14]. In order to further enhance the performance of devices based on Si and Ge NCs, active doping is usually required to obtain all kinds of desired properties of the Si and Ge NC materials [15][16][17][18]. However, doping of nanocrystals is very difficult and so-called "Self-purification" is often claimed to make this behavior even more difficult, as the distance a defect or impurity must move to reach the surface of a nanocrystal is very small [19,20].…”

Section: Introductionmentioning

confidence: 99%

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

Shan

Wang

Sun

et al. 2023

Preprint

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Boron (B)-doped germanium nanocrystals (Ge NCs) films with various doping concentrations were prepared via the plasma-enhanced chemical vapor deposition (PECVD) technique followed by a thermal annealing treatment. The electronic properties of B-doped Ge NCs films combined with the microstructural characterization were investigated. It is worthwhile mentioning that the Hall mobilities \({\mu }_{Hall}\) of Ge NCs films were enhanced after B doping and reached to the maximum of 200 cm2∙V− 1, which could be ascribed to the reduction of surface defects states in the B-doped films. It is also important to highlight that the temperature-dependent mobilities \({\mu }_{H}\left(T\right)\) exhibited different temperature dependence trends in the Ge NCs films before and after B doping. A detailed investigation was carried out for the different carrier transport properties in B-doped Ge NCs films and further discussion with emphasis on the scattering mechanisms in the transport process were proposed.

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Systematic investigations on doping dependent thermal transport properties of single crystal silicon by time-domain thermoreflectance measurements

Cited by 14 publications

References 40 publications

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Graphene Layer Number-Dependent Heat Transport across Nickel/Graphene/Nickel Interfaces

The Electronic Properties of Boron-Doped Germanium Nanocrystals Films

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