Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance

Kan, Jimmy J.; Park, C.; Ching, Chi; Ahn, Jaehwan; Xue, Lin; Wang, R.; Kontos, A.; Liang, Shuai; Bangar, Mangesh A.; Chen, H.; Hassan, Sajjad; Kim, Sanghoek; Pakala, Mahendra; Kang, Sungwon

doi:10.1109/iedm.2016.7838493

Cited by 39 publications

(14 citation statements)

References 3 publications

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“…STT-MRAM technology is considered to be the most viable solution owing to its attractive properties such as CMOS process compatibility, high operation speeds, superior endurance, and negligible leakage, thus, making it an ideal solution for low power, embedded electronics [1][2][3]. Significant resources have been invested in the past decade at major foundries and tool suppliers to optimize this technology for last-level cache (LLC) memory, microcontroller units (MCU), eFLASH, and automotive applications [2,[4][5][6][7][8][9][10][11][12]. Despite these excellent advancements, some challenges remain.…”

Section: Introductionmentioning

confidence: 99%

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

et al. 2021

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Spin-transfer torque magnetoresistive random access memory (STT-MRAM) technology is considered to be the most promising nonvolatile memory (NVM) solution for high-speed and low power applications. Dual MgO-based composite free layers (FL) have driven the development of STT-MRAMs over the past decade, achieving data retention of 10 years at the cost of higher write power consumption. In addition, the need for tunnel magnetoresistance (TMR)-based read schemes limits the flexibility in materials beyond the typical CoFeB/MgO interfaces. In this study, we propose a novel spacerless FL stack comprised of CoFeB alloyed with heavy metals such as tungsten (W) which allows effective modulation of the magnet properties (Ms, Hk) while retaining compatibility with MgO layers. The addition of W results favours a delayed crystallization process, in turn enabling higher thermal budgets up to 180 min at 400 °C. The presence of tungsten reduces the total FL magnetization (Ms) but simultaneously increasing its temperature dependence, thus, enabling a dynamic write current reduction of ~15% at 2 ns pulse widths. Reliable operation is demonstrated with a WER of 1 ppm and endurance >1010 cycles. These results pave the way for alternative designs of STT-MRAMs for low power electronics.

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Section: Introductionmentioning

confidence: 99%

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

et al. 2021

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“…Till now, materials with in-plane anisotropy have been practically used in STT-MRAM [ 10 ]. However, PMA materials can provide superior STT-MRAM properties such as excellent thermal stability, lower power consumption, and increased storage density, which can take the MRAM technology below the 10 nm node [ 11 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Composition and Thickness on the Perpendicular Magnetic Anisotropy of (Co/Pd) Multilayers

Tudu

Tian

Tiwari

2017

Sensors

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Magnetic materials with perpendicular magnetic anisotropy (PMA) have wide-ranging applications in magnetic recording and sensing devices. Multilayers comprised of ferromagnetic and non-magnetic metals (FM–NM) are interesting materials, as their magnetic anisotropy depends strongly on composition and growth parameters. In this context, (Co/Pd) multilayers have gained huge interest recently due to their robustness and tunable PMA. Here, we report a systematic study of the effect of composition on the magnetic anisotropy of (Co/Pd) multilayers grown by Direct Current (DC) magnetron sputtering. Four different series of (Co/Pd)×10 multilayers with different thicknesses of Co and Pd were examined. Vibrating sample magnetometery was used to determine the magnetic anisotropy of these films. X-ray diffraction and transmission electron microscopy experiments were performed to understand the structural morphology of the films. Our results showed that (Co/Pd)×10 multilayers exhibit PMA when the Co to Pd ratio is less than or equal to 1 and the thickness of Co layers is not more than 5 Å. Maximum effective anisotropy energy is shown by the films with a Co to Pd ratio of 1/3.

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“…We recently demonstrated deterministic switching induced by current pulses shorter than 200 ps in dots made of Pt/Co/AlOx stacks [12]. However, the use of a Pt seed layer in MgO based MTJ does not allow to reach the high TMR ratio needed for memory applications [16], [17] (>100%), as it promotes a (111) fcc texture while a (100) bcc structure at the CoFe/MgO interface is needed to achieve high TMR [18]- [20]On the contrary, the Ta/FeCoB/MgO/FeCoB MTJ stacks commonly used for STT-MRAM seem ideal for SOT-MRAM since they combine a high TMR, a perpendicular magnetization [21] and a large spin Hall effect in Ta [22]. In this article, we demonstrate that magnetization switching can be achieved by very short current pulses (down to 400 ps) in Ta/FeCoB/MgO three-terminal SOT-MRAM memory cells.…”

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confidence: 99%

Ultra-Fast Perpendicular Spin–Orbit Torque MRAM

et al. 2018

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Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance

Cited by 39 publications

References 3 publications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications

Effect of Composition and Thickness on the Perpendicular Magnetic Anisotropy of (Co/Pd) Multilayers

Ultra-Fast Perpendicular Spin–Orbit Torque MRAM

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