Systematics of properties of the electron gas in deep-etched quantum wires

Abstract

An efficient method is developed for an iterative solution of the Poisson and Schrödinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional ͑2D͒ approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods. ͓S0163-1829͑96͒00339-6͔

Plasmons in a free-standing nanorod with a two-dimensional parabolic quantum well caused by surface states

“…Only the lowest subbands are occupied each with the one-dimensional electron density of n (1) 1D (E F1 ) = 2.962 × 10 5 cm −1 , and n (1) 1D (E F2 ) = 8.944 × 10 5 cm −1 respectively. Here, the one-dimensional electron density of the i-th subband in the nanorod is calculated by [31] n…”

Model of single-electron decay from a strongly isolated quantum dot

“…This includes an area outside the dot where the 2DEG is still depleted by the gates. Although the computed V(x,y,z) is not separable, previous experience with Poisson-Schrödinger simulations of wires 8,12 and circular dots has shown us that the factorization ansatz leads to very good approximations when the z degree of freedom is integrated out as in Eq. ͑3͒.…”

Photoluminescence of individual doped GaAs∕AlGaAs nanofabricated quantum dots

“…9 Nanofabricated modulation-doped GaAs/ AlGaAs QDs populated by many electrons were also proposed and studied by inelastic light scattering. 4,14 For the -PL experiments, a dye laser at 600 nm pumped by the second harmonic of a neodymium-doped yttrium aluminum garnet pulsed laser was used with pulse duration of 2 ps and repetition rate of 76 MHz. 4 In this letter, we address the interband optical properties of few-electron nanofabricated GaAs/ AlGaAs QDs by -PL.…”

“…Due to the depletion effect, the effective sizes of the electronic confinement are much smaller than the geometrical diameters d of the etched mesa structures particularly at low-electron densities [4,13].…”