T-x phase diagram of the Cu2S-Al2S3 quasibinary System

The high temperature behaviour of A I B III X 2 VI chalcopyrites (A=Cu; B=Al, Ga und In; X=S, Se, Te) was studied by in-situ high temperature synchrotron radiation X-ray diffraction. Structural phase transitions from the α phase with chalcopyrite structure to the β phase with sphalerite structure were obtained in the compounds CuInX 2 and CuGaTe 2 . The driving force of this order-disorder transition is a Cu-In anti site occupancy starting in the critcal temperature region, nearly 10 K before the transition temperature. The order parameter of the phase transition, expressed ase e e n n n = − , goes within the critical region to zero according to IT -T trans I β with the critical exponent β = 0.35(7). Structural transitions were also obtained in CuAlTe 2 and CuGaSe 2 , but they show a different character. In the first compound it goes with the occurrence of a small two phases region, in the second with the formation of an other, unknown phase. Furthermore neither critical behaviour nor an anti site occupancy of the cations is observed.

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“…To our knowledge this behaviour is not reported in literature for CuGaS 2 [7], CuGaSe 2 [8] and CuAlX 2 [9][10][11].…”

mentioning

confidence: 55%

Some are different from others: high temperature structural phase transitions in ternary chalcopyrites

Schorr

Géandier

Корзун

2006

Phys. Status Solidi (c)

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“…Tetragonal CuAlS 2 compound with the chalcopyrite structure crystallizes in the Cu 2 S-Al 2 S 3 pseudobinary system and corresponds to the composition of (Cu 2 S) 0.50 (Al 2 S 3 ) 0.50 [13]. It was estimated that lattice constants for this composition at room temperature are a 0 = 5.334 (5) …”

Section: Characterization Of Samplesmentioning

confidence: 99%

Heat capacity and thermodynamic functions of the CuAlS₂ semiconductor in the temperature range from 80 to 300 K

Корзун

Mianzelen

Шелег

et al. 2005

Physica Status Solidi (b)

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The complex material properties of chalcopyrite and kesterite thin‐film solar cell absorbers tackled by synchrotron‐based analytics

Schorr

Mainz

Mönig

et al. 2012

Progress in Photovoltaics

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In view of the complexity of compound semiconductor based thin‐film solar cells, which are comprised of a multitude of layers, interfaces, surfaces, elements, impurities, etc., it is crucial to characterize and understand the structural, chemical, and electronic properties of these components. Hence, this paper gives a review of our recent progress in the characterization of compound semiconductor thin films using synchrotron‐based characterization methods. It is demonstrated how different analytical techniques are extraordinarily powerful to reveal the material characteristics from many different perspectives, ultimately resulting in a comprehensive picture of these properties. Light will be shed on structural phase transitions, reactive thin‐film formation mechanisms, surface off‐stoichiometries, and the electronic structure of chalcopyrite and kesterite compound semiconductors. Copyright © 2012 John Wiley & Sons, Ltd.

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T-x phase diagram of the Cu2S-Al2S3 quasibinary System

Cited by 4 publications

References 6 publications

Some are different from others: high temperature structural phase transitions in ternary chalcopyrites

Some are different from others: high temperature structural phase transitions in ternary chalcopyrites

Heat capacity and thermodynamic functions of the CuAlS₂ semiconductor in the temperature range from 80 to 300 K

The complex material properties of chalcopyrite and kesterite thin‐film solar cell absorbers tackled by synchrotron‐based analytics

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T-x phase diagram of the Cu2S-Al2S3 quasibinary System

Cited by 4 publications

References 6 publications

Some are different from others: high temperature structural phase transitions in ternary chalcopyrites

Some are different from others: high temperature structural phase transitions in ternary chalcopyrites

Heat capacity and thermodynamic functions of the CuAlS2 semiconductor in the temperature range from 80 to 300 K

The complex material properties of chalcopyrite and kesterite thin‐film solar cell absorbers tackled by synchrotron‐based analytics

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Heat capacity and thermodynamic functions of the CuAlS₂ semiconductor in the temperature range from 80 to 300 K