Ta2O5 doping effects on the property improvement of HfOx-based RRAMs using co-sputtering deposition method

HfTaOx Rectifying Layer for HfOx-Based RRAM for High-Accuracy Neuromorphic Computing Applications

“…Although bilayer-structure RRAM is reported to have enhanced multilevel resistive switching characteristics, its high power consumption must be reduced . Our previous work indicates that Ta 2 O 5 doping has the advantage of lowering the O vacancy formation energy, which moderately increases the O vacancies required for switching operation and hence prevents low-resistance state failures. In addition, this method provides sufficient O vacancies to RRAM to eliminate the forming process, which usually requires a higher bias and may cause unpredictable resistance states, resulting in substantial difficulty in modulating its resistive switching property.…”

“…Although bilayer-structure RRAM is reported to have enhanced multilevel resistive switching characteristics, its high power consumption must be reduced. 14 Our previous work 15 indicates that Ta sufficient O vacancies to RRAM to eliminate the forming process, which usually requires a higher bias and may cause unpredictable resistance states, resulting in substantial difficulty in modulating its resistive switching property.…”