Tail absorption in the determination of optical constants of silicon rich carbides

Allegrezza, M.; Gaspari, F.; Canino, Mariaconcetta; Bellettato, M.; Desalvo, A.; Summonte, C.

doi:10.1016/j.tsf.2014.01.025

Cited by 11 publications

(9 citation statements)

References 22 publications

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“…The TaucLorentz approximation can be considered an accurate way of modelling light absorption in amorphous semiconductor thin films. On the basis of this model, the imaginary part of dielectric function e 2 is given by the following expression: [25][26][27] …”

Section: -2mentioning

confidence: 99%

“…Iterative fitting cycles based on v 2 minimization are then used to determine the set of parameters that supply the best fit between simulated and experimental R&T spectra. The fitting was performed using the GTB-fit computer programme, 26 which is based on the Optical code. 24 Both programmes are open source and available online.…”

Section: -2mentioning

confidence: 99%

“…Further details can be found in Refs. [24][25][26]. A sketch of the procedure is illustrated in Fig.…”

Section: -2mentioning

confidence: 99%

“…To launch the inversion software GTB-fit, 26 the structure "SiO 2 (20 nm)/unknown film/SiO 2 substrate" was used.…”

Section: Optical Bandgap Determination a Jtl Approachmentioning

confidence: 99%

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Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Raciti

Bahariqushchi

Summonte³

et al. 2017

Journal of Applied Physics

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Determination of the optical bandgap (Eg) in semiconductor nanostructures is a key issue in understanding the extent of quantum confinement effects (QCE) on electronic properties and it usually involves some analytical approximation in experimental data reduction and modeling of the light absorption processes. Here, we compare some of the analytical procedures frequently used to evaluate the optical bandgap from reflectance (R) and transmittance (T) spectra. Ge quantum wells and quantum dots embedded in SiO2 were produced by plasma enhanced chemical vapor deposition, and light absorption was characterized by UV-Vis/NIR spectrophotometry. R&T elaboration to extract the absorption spectra was conducted by two approximated methods (single or double pass approximation, single pass analysis, and double pass analysis, respectively) followed by Eg evaluation through linear fit of Tauc or Cody plots. Direct fitting of R&T spectra through a Tauc-Lorentz oscillator model is used as comparison. Methods and data are discussed also in terms of the light absorption process in the presence of QCE. The reported data show that, despite the approximation, the DPA approach joined with Tauc plot gives reliable results, with clear advantages in terms of computational efforts and understanding of QCE.

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Section: -2mentioning

confidence: 99%

Section: -2mentioning

confidence: 99%

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Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Raciti

Bahariqushchi

Summonte³

et al. 2017

Journal of Applied Physics

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show abstract

“…The simulations use the refractive index spectra of SiC and a-Si as determined by fitting [19] and the reference single SiC and a-Si layers, whereas the optical function of Si NCs were approximated using the literature function of continuous nc-Si [20].…”

Section: Methodsmentioning

confidence: 99%

Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications

Perani

Cavalcoli

Canino

et al. 2015

Solar Energy Materials and Solar Cells

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A ternary–3D analysis of the optical properties of amorphous hydrogenated silicon–rich carbide

Summonte

Gaspari

Quaranta

et al. 2019

Materials Chemistry and Physics

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Tail absorption in the determination of optical constants of silicon rich carbides

Cited by 11 publications

References 22 publications

Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis

Electrical properties of silicon carbide/silicon rich carbide multilayers for photovoltaic applications

A ternary–3D analysis of the optical properties of amorphous hydrogenated silicon–rich carbide

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