Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process

Schuchmann, Daniella; Schwartz, Marcel; Schulz, Stephan; Seemayer, Andreas; Wandelt, K.

doi:10.1016/j.jcrysgro.2008.07.038

Cited by 3 publications

(1 citation statement)

References 28 publications

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“…The thermolysis of inorganic heterocycles continues to be a viable route toward binary bulk materials and nanomaterials as demonstrated by the conversion of [ n Bu 2 E(μ-E′ t Bu 2 )] 2 (E = Ga and In; E′ = P and As; 335 and 336 ) into EP and EAs materials upon heating to ca. 500 °C. , Moreover, GaSb can be obtained from [ t Bu 2 Ga(μ-SbEt 2 )] 2 ( 337 ) by CVD …”

Section: Inorganic Rings Derived From Group 12–17 Elementsmentioning

confidence: 99%

Small Inorganic Rings in the 21st Century: From Fleeting Intermediates to Novel Isolable Entities

et al. 2014

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Section: Inorganic Rings Derived From Group 12–17 Elementsmentioning

confidence: 99%

Small Inorganic Rings in the 21st Century: From Fleeting Intermediates to Novel Isolable Entities

et al. 2014

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Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Winter

Knisley

Kalutarage

et al. 2012

Encyclopedia of Inorganic and Bioinorganic Chemistry

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This review describes metal‐organic precursors for the growth of metal‐containing thin films by chemical vapor deposition (CVD)‐based methods. The major emphasis is on precursors that have been reported since 2004, which corresponds to a time of major growth in this field. Progress in the development of metal‐organic precursors is documented for the main group, lanthanide, and group 4– 11 elements. In the main group elements, there has been considerable research activity directed toward the identification of strontium and barium precursors, due both to the technological importance of mixed oxide phases and the inherent difficulties in obtaining volatile, stable thermally complexes of these large metal ions. Aluminum, gallium, and indium have also been the subject of intense investigation because of the importance of many phases containing these elements. The group 4 and 5 elements titanium, zirconium, hafnium, niobium, and tantalum have been the subject of considerable precursor development activity because of the importance of several mixed oxide phases and the applications of zirconium oxide and hafnium oxide as high‐permittivity gate materials in microelectronic devices. Growth of metal nitride films of these elements has also been an active area of research for use as barrier materials in microelectronic devices. The deposition of copper and other first‐row transition‐metal films from metal‐organic precursors is driven by the urgent need for copper metalization procedures in microelectronics device manufacturing. The atomic layer deposition (ALD) growth of the noble metals ruthenium, rhodium, iridium, palladium, and platinum has been a very active research area. The current state of metal‐organic precursor development is presented for each of these metallic elements.

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Low‐Valent Organometallics—Synthesis, Reactivity, and Potential Applications

Schulz

2010

Chemistry A European J

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General concepts for the synthesis and stabilization of low-valent organometallic complexes of Groups 2, 12, 13, and 15 metals and common structural motifs are described. While kinetically stabilized complexes are in the focus for more than two decades, the principle of base-stabilization only recently allowed the synthesis of unforeseen compounds. As-prepared complexes not only show fascinating structural diversities, but exhibit also very interesting chemical properties. Low-valent complexes are of particular interest in the synthesis of novel molecular complexes, but may also find applications as tailor-made precursors for the synthesis of nanosized materials.

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Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process

Cited by 3 publications

References 28 publications

Small Inorganic Rings in the 21st Century: From Fleeting Intermediates to Novel Isolable Entities

Small Inorganic Rings in the 21st Century: From Fleeting Intermediates to Novel Isolable Entities

Metallic Materials Deposition: Metal‐Organic PrecursorsUpdate based on the original article by Charles H. Winter, Wenjun Zheng and Hani M. El‐Kaderi,Encyclopedia of Inorganic ChemistrySecond Edition, © 2005, John Wiley & Sons, Ltd.

Low‐Valent Organometallics—Synthesis, Reactivity, and Potential Applications

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