Thin films of ZnS/Si composite were prepared using pulsed laser deposition by alternately ablating ZnS and Si materials on a rotary target holder onto an ultra-clean glass substrate in vacuum. The film structure consisted of a mixture of Si and ZnS nanocrystals with some segregation of S and Zn. Most of the particles in the film were found to be less than 15 nm in diameter even after annealing for 6 hours at 500 o C in air. With excitation wavelengths of 280 nm and 380 nm, the composite film yielded largely independent photoluminescent (PL) emission peaks originating from the Si and ZnS nanoparticles. There is a slight difference in the Si and ZnS PL results compared with those obtained from thin films of Si nanocrystals and ZnS nanoparticles embedded in SiO 2 matrices. This difference is attributed to the different segregation and oxidation behaviors of the materials in different neighborhood environments. Our results open up the possibility of modifying the PL of ZnS/Si composite films for potential applications in multiple-function optoelectronic devices.
IntroductionIn recent years, low-dimensional semiconductors, especially composites, have attracted much interest because of their valuable photoluminescent (PL) properties [1-3], especially visible PL at room temperature of nanometer-sized Si [4][5][6][7] and II-VI materials such as ZnS [8][9][10][11][12][13][14][15][16][17][18]. Much research was focused on lightemitting materials, modification of their optical properties [17], and their potential applications in devices in electronics, optoelectronics and sensors. ZnS has a wide band gap of 3.5-3.8 eV at room temperature, and the band gap can be tuned in the UV region. However, hitherto, tuning in the visible region was possible only by employing appropriate dopants [10,11]. This limitation, together with the small Bohr exciton radius of ZnS (2.5 nm), has attracted much interest in the study of ZnS nanoparticles [12][13][14]. Results from Kanemoto's work [17] indicated that the defect levels play an important role in determining the luminescence characteristics of the ZnS nanoparticles. The PL efficiency was found to be grossly affected by the presence of intrinsic surface states of the nanoparticles, and the nature of the chemical treatment employed in their fabrication [11,16].In this paper, we report PL investigations of ZnS/Si thin films prepared by using a variation of the pulsed laser deposition method. The PL emission of the ZnS/Si composite film produced from excitation by the 280 nm wavelength line was similar, but not identical, to that of pure Si nanoparticles, or Si nanoparticles in thin films of Si/C, Si/Ge and Si/Al 2 O 3 [19][20][21][22][23]; while that caused by excitation by the 380 nm line was similar to that of ZnS nanoparticles embedded in SiO 2 matrices [24]. The slight variation in the PL of the ZnS/Si composite film is attributed to its different neighboring compositions and structures, and their different segregation and oxidation behaviors. These results open up possibili...