A QM/MM approach using ωB97X-D combined with AMOEBA calculations was used to analyze the energetic disorder in the vicinity of interfaces in amorphous organic heterostructures. Distributions of ground-, excited-, and cationic-state energies as well as of ionization potentials and excitation energies, all being relevant quantities for the transport properties of thin films, were calculated. As already found for bulk amorphous organic semiconductors, local densities of states at molecular interfaces possess Gaussian-shaped profiles with a significant amount of disorder. Assuming a disorder-limited activation of exciton and charge transport, a decrease in the amount of disorder could improve the transport properties. Relating calculated disorders to molecular parameters revealed that in line with the Bässler model, especially the molecular polarity, its change upon electronic excitation, and the molecular polarizability are relevant quantities leading to energetically largely disordered films. Moreover, because of the different mechanisms of exciton and polaron delocalization, a given morphology with disordered charge-transport levels gives not necessarily rise to disordered exciton-transport levels and vice versa.
| INTRODUCTIONDisorder in molecular organic semiconductors has been recognized as a key parameter limiting the semiconductor's transport properties for both charges and excitons. [1] A random distribution of the molecules in a disordered amorphous film results in considerable variations in local intermolecular interactions. This gives rise to a distribution of ionization and excitation energies, the relevant quantities for charge and exciton transport, which depend among others on these intermolecular interaction energies. [2] According to the central limit theorem, resulting densities of states (DOSs) for excitons and charges have a Gaussian shape because intermolecular interaction energies are composed of many independently varying contributions. [3] The width of the Gaussian-shaped DOSs, ie, the standard deviation of the Gaussian normal distribution σ, is referred to as the disorder parameter and characterizes the amount of site energy disorder, ie, of static disorder, in the semiconducting solid-state system. [2] Based on this Gaussian DOS, the Bässler model describes charge transport in organic semiconductors as an incoherent hopping process between the normally distributed sites. [4] The expression "disorder" can be connected with geometrical and energetical disorder. In line with the Bässler nomenclature, in the following the expression, "disorder" is always used to characterize the energetic disorder unless otherwise noted. Although experimentally detected field-and temperature-dependent charge carrier mobilities confirm the predictions of the Bässler model in principle, no direct experimental proof for the Gaussian-shaped DOS, particularly of charge carriers, in disordered molecular semiconductors † This article is published as part of a special issue to celebrate the 80 th birthday of P...