Tailoring band structure and band filling in a simple cubic (IV, III)-VI superconductor

Kriener, Markus; Kamitani, M.; Koretsune, Takashi; Arita, Ryotaro; Taguchi, Y.; Tokura, Y.

doi:10.1103/physrevmaterials.2.044802

Cited by 15 publications

(12 citation statements)

References 43 publications

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“…Although In + and In 3+ occupy different sites in the TlSe structure, those In occupies single site in the NaCl structure. Namely, the valence state of In in NaCl-type InTe can be regarded as the valence-skipping state of In + and In 3+ [19]. Hence, NaCl-type InTe is a good material for investigating the friendship between valence skipping and superconductivity.…”

Section: Introductionmentioning

confidence: 99%

High-Pressure Synthesis and Superconducting Properties of NaCl-Type In1−xPbxTe (x = 0–0.8)

et al. 2020

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We have investigated the Pb-substitution effect on the superconductivity of NaCl-type In1-xPbxTe samples obtained using high-pressure synthesis. Polycrystalline samples with x = 0-0.8 were obtained, and the lattice parameter systematically increased by Pb substitution. The superconducting transition temperature (Tc ~3 K for x = 0) increased to 5.3 K (for x = 0.4) by Pb substitutions. According to the comparison of the electronic states between NaCl-type InTe and PbTe, we consider that the Pb substitution increases electron carriers. Possible mechanisms of the enhancement of Tc in this system have been discussed on the basis of conventional pairing mechanism and the possibility of the relation to the valence-skipping state of In.

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Section: Introductionmentioning

confidence: 99%

High-Pressure Synthesis and Superconducting Properties of NaCl-Type In1−xPbxTe (x = 0–0.8)

et al. 2020

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“…Since the calculated gap energy (Fig. 2e) indicates that a band inversion is expected for a metal telluride with a = 6.2 Å, AgSnBiTe3 with a = 6.20217 (9) Å is expected to have topologically preserved electronic states near the Fermi energy (EF). Thus, the In-substitution effects on physical properties of AgSnBiTe3 are of interest because of the analogy to (Sn,In)Te, in which topological superconductivity is expected to emerge.…”

Section: Superconducting Properties Of (Agsnbi)(1-y)/3inytementioning

confidence: 99%

“…Metal tellurides (MTe) with a NaCl-type structure have been extensively studied due to their physical properties as topological materials [1][2][3][4] , thermoelectric materials [5][6][7] , and superconductors [8][9][10][11][12] . Among them, In-doped SnTe superconductors have been drawing attention as a candidate system of a topological superconductor 4,[13][14][15][16][17] .…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in In-doped AgSnBiTe3 with possible band inversion

Mitobe

Hoshi

Kasem

et al. 2021

Preprint

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We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band inversion and topologically preserved electronic states. To explore new superconducting phases related to the topological electronic states, we investigated the In-doping effects on structural and superconducting properties for x = 0.33 (AgSnBiTe3). For (AgSnBi)(1-y)/3InyTe, single-phase polycrystalline samples were obtained for y = 0–0.5 by high-pressure synthesis. Superconductivity was observed for y = 0.2–0.5. For y = 0.4, specific heat investigation confirmed the emergence of bulk superconductivity. Because the parameters obtained from specific heat analyses were comparable to In-doped SnTe, we expect that the (AgSnBi)(1-y)/3InyTe and other (Ag,In,Sn,Bi)Te phases are a candidate system for studying topological superconductivity.

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“…On the contrary, in x = 0.63 and 0.53 series, p decreases for a small amount of In doping. Such a nonmonotonic y-dependence of p with varying x can be understood by the valence skipping character of the In element [28]. In other words, In is incorporated as nominal In + (acceptor) in large x region and nominal In 3+ (donor) in small x and y region.…”

Section: Main Textmentioning

confidence: 99%

Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: From topological crystalline insulator and polar semimetal to superconductor

Yoshimi

Masuko

Ogawa

et al. 2021

Phys. Rev. Materials

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Epitaxial thin films of (SnxPb1-x)1-yInyTe were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 ≤ x ≤ 1, 0 ≤ y ≤0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such as topological crystalline insulator, topological semimetal, and superconductivity. For the samples with large Sn compositions (x > 0.5), hole density increases with In composition (y), which results in the appearance of superconductivity. On the other hand, for those with small Sn compositions (x < 0.5), increase in In composition reduces the hole density and changes the carrier type from ptype to n-type. In a narrow region centered at (x, y) = (0.16, 0.07) where the n-type carriers are slightly doped, charge transport with high mobility exceeding 5,000 cm 2 V -1 s -1 shows up, representing the possible semimetal states. In those samples, the optical second harmonic generation measurement shows the breaking of inversion symmetry along the out-of-plane [111] direction, which ensures the presence of polar semimetal state. The thin films of (SnxPb1-x)1-yInyTe materials systems with a variety of electronic states would become a promising materials platform for the exploration of novel quantum phenomena.

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Tailoring band structure and band filling in a simple cubic (IV, III)-VI superconductor

Cited by 15 publications

References 43 publications

High-Pressure Synthesis and Superconducting Properties of NaCl-Type In1−xPbxTe (x = 0–0.8)

High-Pressure Synthesis and Superconducting Properties of NaCl-Type In1−xPbxTe (x = 0–0.8)

Superconductivity in In-doped AgSnBiTe3 with possible band inversion

Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: From topological crystalline insulator and polar semimetal to superconductor

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