Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials

Zhang, Chunmei; Guo, Ping; Zhou, Jian

doi:10.1021/acs.nanolett.2c02802

Cited by 32 publications

(25 citation statements)

References 87 publications

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“…46 The low switching barriers of sliding ferroelectricity may enable convenient electrical control of various physical properties of 2D materials, like magnetic, photovoltaic, valleytronic and topological properties. 35 Magnetoelectric couplings (Figure 3a) and/or ferroelectricity-valley couplings (Figure 3b) have already been predicted in a series of with sliding ferroelectric bilayers or multilayers, for example, CrI 3 , Cr 2 Ge 2 Te 6 , Fe 3 GeTe 2, 57 VX 2 (X = S, Se, Te), 6,55,58,59 F I G U R E 2 (a) A comparison of ferroelectric switching with a low "collective" barrier, and ferroelectric-antiferroelectric transition with a high "isolated" barrier in WTe 2 bilayer. (b) Moire ferroelectric domains in twisted WTe 2 bilayer.…”

Section: Sliding Ferroelectricitymentioning

confidence: 74%

“…54 In some magnetic systems like VSe 2 bilayer, photo-induced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment (Figure 3d), and the underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. 55 It is even predicted that light illumination could inject non-equilibrium magnetic moments composed of both spin and orbital degrees of freedom contributions into the sliding ferroelectrics like ZrI 2 , WTe 2 , and MoS 2 bilayer (Figure 3e). Under intermediate light illumination, one can yield non-equilibrium magnetic moments on the order of 0.1-1 μ B in these systems, which also depends on the polarization nature of incident light.…”

Section: Sliding Ferroelectricitymentioning

confidence: 99%

“…Reprinted with permissions. 55 (e) Schematic plot of photo-magnetization in bilayer ZrI 2 during layer sliding, with the contrasting magnetic moment states denoted by arrows with different sizes and colors, which can be probed by magneto-optical methods. Reprinted with permissions.…”

Section: Sliding Ferroelectricitymentioning

confidence: 99%

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Theoretical designs of low‐barrier ferroelectricity

Zhong

Gao

Yang

et al. 2023

WIREs Comput Mol Sci

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Ferroelectrics with electrically switchable spontaneous polarizations can be used for information storage, where a low switching barrier is favorable to reduce the energy cost and enhance the speed for data writing. Meanwhile their robustness at working temperature should be ensured, which is a challenge for the designs of low‐barrier ferroelectrics. Here we review several types of ferroelectric mechanisms that may render both low switching barriers and room‐temperature robustness, which have been theoretically proposed in previous studies. (1) The prediction of sliding ferroelectricity with ultralow switching barriers has been experimentally confirmed in a series of van der Waals layers, which may enable convenient electrical control of various physical properties in 2D materials, like magnetic, photovoltaic, valleytronic and topological properties. (2) Hydrogen‐bonded ferroelectricity spontaneously formed by head‐to‐tail chains can be switched by proton‐transfer crossing a low barrier, and a mechanism of ultra‐high piezoelectricity utilizing the specific features of hydrogen bonding has been proposed. (3) High‐ionicity ferroelectricity induced by covalent‐like ionic bondings may entail high polarizations and low barriers during switching, which is attributed to the features of long‐range Coulomb interaction, and the long ion‐displacements crossing unitcell may give rise to unconventional ferroelectricity with quantized polarizations even in crystals of non‐ferroelectric point groups. Those low‐barrier ferroelectric mechanisms may bring in both new physics and technological advances, which are to be further explored.This article is categorized under: Structure and Mechanism > Computational Materials Science

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Section: Sliding Ferroelectricitymentioning

confidence: 74%

Section: Sliding Ferroelectricitymentioning

confidence: 99%

See 1 more Smart Citation

Theoretical designs of low‐barrier ferroelectricity

Zhong

Gao

Yang

et al. 2023

WIREs Comput Mol Sci

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“…24 However, the layer dependence of FV property is rarely reported, even if it is very interesting and useful. 25,26 Here, the bilayer stacking of YI 2 is studied to explore possible physical behaviors, depending on the stacking orders. There are two kinds of stacking structures (AA-0, AA-1, and AA-2 and AB-0, AB-1, and AB-2) for bilayer YI 2 , as shown in Figure 2.…”

mentioning

confidence: 99%

Coexisting Ferroelectric and Ferrovalley Polarizations in Bilayer Stacked Magnetic Semiconductors

Tong

Deng

et al. 2023

Nano Lett.

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It has long been expected that the coexistence of ferroelectric and ferrovalley polarizations in one magnetic semiconductor could offer the possibility to revolutionize electronic devices. In this study, monolayer and bilayer YI 2 are studied. Monolayer YI 2 is a ferromagnetic semiconductor and exhibits a valley polarization up to 105 meV. All of the present bilayer YI 2 regardless of stacking orders show antiferromagnetic states. Interestingly, the bilayer YI 2 with 3R-type stackings shows not only valley polarization but also unexpected ferroelectric polarization, proving the concurrent ferrovalley and multiferroics behaviors. Moreover, the valley polarization of 3R-type bilayer YI 2 can be reversed by controlling the direction of ferroelectric polarization through an electric field or manipulating the magnetization direction using an external magnetic field. The amazing phenomenon is also demonstrated in 2D van der Waals LaI 2 and GdBr 2 bilayers. A design idea of multifunctional devices is proposed based on the concurrent ferrovalley and multiferroics characteristics.

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“…Slidetronics is one such static strategy, which holds great promise for engineering physical properties. For example, slidetronic bilayers with intrinsically T -broken nature have been shown to exhibit P and T tunable responses, such as bulk photovoltaic effect and electromagnetic coupling . Very recently, the paradigm of slidetronics is also introduced to guarantee the layer-locked Berry curvature as well as LHE. , Even so, slidetronics suffers from harsh technological engineering and low durability, − leading to an outstanding challenge for the application of LHE from the sliding strategies.…”

mentioning

confidence: 99%

Layer Hall Effect in Multiferroic Two-Dimensional Materials

et al. 2023

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The layer Hall effect (LHE) is of fundamental and practical importance in condensed-matter physics and material science; however, it was rarely observed and usually based on the paradigms of persistent electric field and sliding ferroelectricity. Here, a new mechanism of LHE is proposed by coupling layer physics with multiferroics using symmetry analysis and a low-energy k·p model. Due to time-reversal symmetry breaking and valley physics, the Bloch electrons on one valley will be subject to a large Berry curvature. This combined with inversion symmetry breaking gives rise to layer-polarized Berry curvature and can force the electrons to deflect in one direction of a given layer, thereby generating the LHE. We demonstrate that the resulting LHE is ferroelectrically controllable and reversible. Using first-principles calculations, this mechanism and predicted phenomena are verified in the multiferroic material of bilayer Co2CF2. Our finding opens a new direction for LHE and 2D materials research.

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Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials

Cited by 32 publications

References 87 publications

Theoretical designs of low‐barrier ferroelectricity

Theoretical designs of low‐barrier ferroelectricity

Coexisting Ferroelectric and Ferrovalley Polarizations in Bilayer Stacked Magnetic Semiconductors

Layer Hall Effect in Multiferroic Two-Dimensional Materials

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