Tailoring Electrical Transport Across Grain Boundaries in Polycrystalline Graphene

All large-scale graphene films contain extended topological defects dividing graphene into domains or grains. Here, we spatially map electronic transport near specific domain and grain boundaries in both epitaxial graphene grown on SiC and CVD graphene on Cu subsequently transferred to a SiO 2 substrate, with one-to-one correspondence to boundary structures.Boundaries coinciding with the substrate step on SiC exhibit a significant potential barrier for electron transport of epitaxial graphene due to the reduced charge transfer from the substrate near the step edge. Moreover, monolayer-bilayer boundaries exhibit a high resistance that can change depending on the height of substrate step coinciding at the boundary. In CVD graphene, the resistance of a grain boundary changes with the width of the disordered transition region between adjacent grains. A quantitative modeling of boundary resistance reveals the increased electron Published in ACS Nano 7, 7956 (2013).

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“…The gate voltage dependence of this result is consistent with report from Tsen et al 37 if we assume that …”

Section: Grain Boundaries In Cvd Graphenesupporting

confidence: 93%

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

et al. 2013

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“…Larger sheets of few-layer or monolayer graphene can now be directly synthesized via chemical vapor deposition (CVD) on nickel or copper substrates [54,55] with mobilities rivalling the ones of exfoliated samples. [56] For samples placed on SiO 2 /Si wafers, mobilities on the order of ~1,000-10,000 cm 2 /Vs are now routinely observed and regarded as the standard for graphene transistor products for biochemical sensing applications. [57] The electronic performances of CVD graphene [58] can be significantly enhanced by growing single-crystal graphene free of grain boundaries [59] and by using a BN substrate similarly to exfoliated graphene, with which mobility up to ~50,000-350,000 cm 2 /Vs can be achieved.…”

Section: Sensing With Graphene Of High Carrier Mobilitymentioning

confidence: 99%

Sensing at the Surface of Graphene Field‐Effect Transistors

et al. 2016

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Abstract. 10Recent research trends now offer new opportunities for developing the next generations of label-free biochemical sensors using graphene and other two-dimensional materials. While the physics of graphene transistors operated in electrolyte is well grounded, important chemical challenges still remain to be addressed, namely the impact of the chemical functionalizations of graphene on the key electrical parameters and the sensing performances. In fact, graphene -at least ideal graphene -is highly chemically inert. The 15 functionalizations and chemical alterations of the graphene surface -both covalently and non-covalently -are crucial steps that define the sensitivity of graphene. The presence, reactivity, adsorption of gas and ions, proteins, DNA, cells and tissues on graphene have been successfully monitored with graphene. This review aims to unify most of the work done so far on biochemical sensing at the surface of a (chemically functionalized) graphene field-effect transistor and the challenges that lie ahead. We are convinced that graphene biochemical sensors 20 hold great promises to meet the ever-increasing demand for sensitivity, especially looking at the recent progresses suggesting that the obstacle of Debye screening can be overcome.2

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“…In addition, GBs with larger grain size exhibit relatively better conductive performance [247,251]. On the other hand, a few experiments [209,252,253] observed that the configuration of GBs or the variation of grain sizes had little effects on the conductive properties of graphene. Recent study [254] also suggested that increasing grain size would be an inefficient way to improve the electrical conductivity of graphene when the grain size is larger than 1 μm.…”

Section: Disorders In Graphene Structurementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

533

187

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Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

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Tailoring Electrical Transport Across Grain Boundaries in Polycrystalline Graphene

Cited by 565 publications

References 29 publications

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

Spatially Resolved Mapping of Electrical Conductivity across Individual Domain (Grain) Boundaries in Graphene

Sensing at the Surface of Graphene Field‐Effect Transistors

Structure of graphene and its disorders: a review

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