Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films

Huang, Xian-Xiong; Zhang, Tian-Fu; Wang, Wei; Ge, Peng-Zu; Tang, Xin‐Gui

doi:10.1016/j.matdes.2021.109666

Cited by 35 publications

(21 citation statements)

References 36 publications

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“…Furthermore, we also demonstrated reliable polarization and energy performance under strong strain as the PHO films were epitaxially grown on the flexible mica substrates. Compared with existing PHO research, our epitaxial PHO films show the best energy storage performance at high temperature and under strong strain, [16,17,[21][22][23] greatly expanding their application ranges, for example, for flexible electronics.…”

Section: Introductionmentioning

confidence: 90%

Antiferroelectric Anisotropy of Epitaxial PbHfO₃ Films for Flexible Energy Storage

Tsai

Zheng

et al. 2021

Adv Funct Materials

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Dielectric capacitors are widely studied for power supply systems because they can quickly store and release electrical energy. Among various kinds of dielectric materials, antiferroelectrics show promising features of high energy-storage density and efficiency. In this study, epitaxial antiferroelectric PbHfO 3 films with different orientations are fabricated, in which remarkable anisotropies of polarization and energy storage properties are discovered. With the optimization of film orientation, much-improved energy density and excellent high-temperature efficiency are achieved in the PbHfO 3 films. Moreover, the PbHfO 3 films are fabricated onto flexible mica substrates, which exhibit excellent property robustness against mechanical bending. This study provides a fundamental understanding of the anisotropic antiferroelectric behaviors of epitaxial PbHfO 3 films and provides a generalizable pathway for flexible energy-storage dielectric capacitors.

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Section: Introductionmentioning

confidence: 90%

Antiferroelectric Anisotropy of Epitaxial PbHfO₃ Films for Flexible Energy Storage

Tsai

Zheng

et al. 2021

Adv Funct Materials

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“…The SrHfO 3 thin films were grown from targets with the same nominal composition. For SrHfO 3 , 30-400-nm-thick films were deposited on multiple substrates [i.e., SrTiO 3 (001), SrTiO 3 (110), and NdScO 3 (110)] at a range of heater temperatures (600-850 °C), across various dynamic oxygen-partial pressures (1-100 mTorr), laser fluence values (0.75-2.5 J cm −2 ), and laser repetition rates (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20). The composition of the Pb 1−x Sr x HfO 3 thin-film heterostructures was varied across 0 < x < 1 through sub-unit-cell-level mixing using two ceramic targets with composition PbHfO 3 and SrHfO 3 via a programmable target rotator (Neocera, LLC) that was synced with the excimer laser.…”

Section: Methodsmentioning

confidence: 99%

“…PbHfO 3 is isostructural to the archetypal antiferroelectric PbZrO 3 (Pba2, lattice parameters: a = 5.88 Å, b = 11.77 Å, c = 8.22 Å [17] ), has a large bandgap (3.4 eV [18] ), and a dielectric constant ≈90 at room temperature. [12] There have been a few reports wherein PbHfO 3 has been produced as polycrystalline thin films including those produced by atomic-layer deposition [19][20][21] and the antiferroelectric, electrocaloric, and energy-storage properties have been explored. SrHfO 3 has also been synthesized using solid-state reaction methods and its structural properties examined.…”

mentioning

confidence: 99%

Exploring the Pb₁₋_xSr_xHfO₃ System and Potential for High Capacitive Energy Storage Density and Efficiency

et al. 2021

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The hafnate perovskites PbHfO3 (antiferroelectric) and SrHfO3 (“potential” ferroelectric) are studied as epitaxial thin films on SrTiO3 (001) substrates with the added opportunity of observing a morphotropic phase boundary (MPB) in the Pb1−xSrxHfO3 system. The resulting (240)‐oriented PbHfO3 (Pba2) films exhibited antiferroelectric switching with a saturation polarization ≈53 µC cm−2 at 1.6 MV cm−1, weak‐field dielectric constant ≈186 at 298 K, and an antiferroelectric‐to‐paraelectric phase transition at ≈518 K. (002)‐oriented SrHfO3 films exhibited neither ferroelectric behavior nor evidence of a polar P4mm phase . Instead, the SrHfO3 films exhibited a weak‐field dielectric constant ≈25 at 298 K and no signs of a structural transition to a polar phase as a function of temperature (77–623 K) and electric field (–3 to 3 MV cm−1). While the lack of ferroelectric order in SrHfO3 removes the potential for MPB, structural and property evolution of the Pb1−xSrxHfO3 (0 ≤ x < 1) system is explored. Strontium alloying increased the electric‐breakdown strength (EB) and decreased hysteresis loss, thus enhancing the capacitive energy storage density (Ur) and efficiency (η). The composition, Pb0.5Sr0.5HfO3 produced the best combination of EB = 5.12 ± 0.5 MV cm−1, Ur = 77 ± 5 J cm−3, and η = 97 ± 2%, well out‐performing PbHfO3 and other antiferroelectric oxides.

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“…In 2020, Chao et al [176] prepared Pb 0.98 La 0.02 (Hf x Sn 1−x ) 0.995 O 3 antiferroelectric ceramics, and achieved a good energy storage performance: W rec and  are of 7.63 J/cm 3 and 94% for x = 0.45 composition, respectively. Recently, Huang et al [177] reported pure PHO ceramic films by sol-gel method at 650 ℃ annealing temperature, and achieved a W rec of 24.9 J/cm 3 .…”

Section: Pb-based Antiferroelectric Ceramicsmentioning

confidence: 99%

Progress and perspectives in dielectric energy storage ceramics

Zeng

et al. 2021

J Adv Ceram

241

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Dielectric ceramic capacitors, with the advantages of high power density, fast charge-discharge capability, excellent fatigue endurance, and good high temperature stability, have been acknowledged to be promising candidates for solid-state pulse power systems. This review investigates the energy storage performances of linear dielectric, relaxor ferroelectric, and antiferroelectric from the viewpoint of chemical modification, macro/microstructural design, and electrical property optimization. Research progress of ceramic bulks and films for Pb-based and/or Pb-free systems is summarized. Finally, we propose the perspectives on the development of energy storage ceramics for pulse power capacitors in the future.

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Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films

Cited by 35 publications

References 36 publications

Antiferroelectric Anisotropy of Epitaxial PbHfO₃ Films for Flexible Energy Storage

Antiferroelectric Anisotropy of Epitaxial PbHfO₃ Films for Flexible Energy Storage

Exploring the Pb₁₋_xSr_xHfO₃ System and Potential for High Capacitive Energy Storage Density and Efficiency

Progress and perspectives in dielectric energy storage ceramics

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Tailoring energy-storage performance in antiferroelectric PbHfO3 thin films

Cited by 35 publications

References 36 publications

Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage

Antiferroelectric Anisotropy of Epitaxial PbHfO3 Films for Flexible Energy Storage

Exploring the Pb1−xSrxHfO3 System and Potential for High Capacitive Energy Storage Density and Efficiency

Progress and perspectives in dielectric energy storage ceramics

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Antiferroelectric Anisotropy of Epitaxial PbHfO₃ Films for Flexible Energy Storage

Antiferroelectric Anisotropy of Epitaxial PbHfO₃ Films for Flexible Energy Storage

Exploring the Pb₁₋_xSr_xHfO₃ System and Potential for High Capacitive Energy Storage Density and Efficiency