Tailoring Epitaxial VO<sub>2</sub> Thin Films with Tunable Properties via Spray Pyrolysis

Ainabayev, Ardak; Walls, Brian; Casey, Daniel; Caffrey, David; Mullarkey, Daragh; McGlinchey, Amy; Khare, Amit; Tikhonov, Alexander; Ilhan, Cansu; Brennan, Darragh; McCormack, Sarah J.; Shvets, Igor

doi:10.1021/acs.jpcc.3c06057

Cited by 1 publication

(1 citation statement)

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“…Analysis of the two pole figures reveals that the V 2 O 3 and VO 2 crystals before and after oxidation exhibit the following crystallographic orientation relationships: VO 2 (100) R //V 2 O 3 (001) and VO 2 [010] R //V 2 O 3 [100], [010], and [00]. The formation of VO 2 crystals with these orientation relationships indicates that the VO 2 was topotactically formed from V 2 O 3 crystals, which is consistent with the findings from other studies. ,, The same analysis also confirmed that V 2 O 3 underwent topotactic oxidation to VO 2 at all oxidation temperatures.…”

Section: Resultssupporting

confidence: 86%

Optimal Oxidation Conditions Using Water Vapor for the Topotactic Formation of High-Quality Vanadium Dioxide Films from Vanadium Sesquioxide Epitaxial Films

Nishii,

Ikenoue,

Miyake

et al. 2024

Crystal Growth & Design

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Vanadium dioxide (VO 2 ) films, which undergo a metal−insulator transition (MIT) at 68 °C, are promising materials for switching device applications. Topotactic oxidation of vanadium sesquioxide (V 2 O 3 ) epitaxial films yields highly oriented VO 2 films. However, the effect of oxidation conditions on the MIT properties of the resulting VO 2 films has not been thoroughly explored. In this study, we investigated the effects of oxidation conditions, such as oxygen partial pressure, temperature, and time, on the topotactic transformation from V 2 O 3 to VO 2 films and fabricated high-quality VO 2 films. Thermodynamic calculations demonstrated that oxidation atmospheres with thermodynamically stable VO 2 can be formed using a gas mixture containing water vapor and hydrogen. Experiments with different oxidation parameters revealed that the optimal oxidation conditions are oxygen partial pressures ranging from 10 −20 to 10 −8 atm, oxidation temperature of 500 °C, and oxidation times exceeding 6 h. Under these conditions, V 2 O 3 was topotactically oxidized to VO 2 , and the electrical resistance of the resulting VO 2 films changed by 4.7 orders of magnitude across the MIT. This study opens new avenues for fabricating highly sensitive VO 2 -based switching devices.

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Section: Resultssupporting

confidence: 86%