Tailoring InAs/Ga1-InxSb superlattices for long-wavelength IR applications

Roslund, Jöran H.; Andersson, T. G.

doi:10.1006/spmi.1994.1114

Cited by 16 publications

(9 citation statements)

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“…Also, the sensitivity of the cutoff wavelength of InAs/Ga x In 1Ϫx Sb superlattices to the value of x, especially at longer wavelengths, is very high. 15 Therefore, uniformity and reproducibility of the InAs/Ga x In 1Ϫx Sb superlattices are lower than the InAs/GaSb superlattices. …”

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confidence: 99%

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

Mohseni

Michel

Sandoen

et al. 1997

Applied Physics Letters

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confidence: 99%

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

Mohseni

Michel

Sandoen

et al. 1997

Applied Physics Letters

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“…[3][4][5] Part of this progress is due to the extensive modeling efforts, which have improved over time to include even Sb segregation on the interfaces. [6][7][8][9][10][11][12] Most of this progress has been based on the use of molecular beam epitaxy (MBE) growth, as it is very challenging to grow the monolayer interfaces needed for short period GaSb/InAs superlattices via organometallic vapor phase epitaxy (OMVPE). 13 OMVPE growth technology is desirable, as it has the advantage of higher volume production than MBE, and thus the cost advantage compared to that of MCT technology would be improved significantly.…”

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confidence: 99%

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

David

Steger

Thewalt

et al. 2012

Journal of Applied Physics

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InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally, the initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector with a 40 nm period are shown. Its cutoff wavelength is 0.15 eV (8.5 μm), in good agreement with the predicted type II transition energy of 0.17 eV.

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“…In this work, miniband structure of InAs/GaSb based type-II SL are calculated by Kronig-Penney model and EFA [9][10][11] given as without strain effect that the lattice mismatch, which is about Da=a ¼ 0:3 À 0:4%, is acceptable for lattice periodicity. The EFA model is valid at the periodical boundary conditions.…”

Section: Theoretical Considerationmentioning

confidence: 99%

Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range

Kaya

Hoştut

Kılıç

et al. 2013

Journal of Applied Physics

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In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. © 2013 American Institute of Physics

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Tailoring InAs/Ga1-InxSb superlattices for long-wavelength IR applications

Cited by 16 publications

References 0 publications

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range

InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range

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