Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

Chen, H.-H.; Su, Shu Hsuan; Chang, S. L.; Cheng, Bingqing; Chen, S. W.; Chen, H.-Y.; Lin, Ming–Fa; Huang, Jie

doi:10.1038/srep11623

Cited by 19 publications

(24 citation statements)

References 37 publications

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“…The hexagonal symmetry leads to the 4-adatom-dominated nanoclusters. However, the relatively few vacancies in the large-scale hexagonal array (arrows in [50,51] show features similar to the DFT calculation, as shown in Fig. 5(b).…”

Section: Resultssupporting

confidence: 63%

“…The aggregated adatom arrangements are associated with the large-scale hexagonal symmetry, Bi coverage, and relatively few vacancies. The optimized geometric structures were validated by the STM measurements [50,51]. Hopefully, these rich fundamental features in bismuth structures can promote potential applications for use in electronic devices and energy materials.…”

mentioning

confidence: 91%

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Substrate-induced structures of bismuth adsorption on graphene: a first principles study

Lin

Chang

Chen

et al. 2016

Phys. Chem. Chem. Phys.

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The geometric and electronic properties of Bi-adsorbed monolayer graphene, enriched by the strong effect of a substrate, are investigated by first-principles calculations. The six-layered substrate, corrugated buffer layer, and slightly deformed monolayer graphene are all simulated. Adatom arrangements are thoroughly studied by analyzing the ground-state energies, bismuth adsorption energies, and Bi-Bi interaction energies of different adatom heights, inter-adatom distance, adsorption sites, and hexagonal positions. A hexagonal array of Bi atoms is dominated by the interactions between the buffer layer and the monolayer graphene. An increase in temperature can overcome a ∼50 meV energy barrier and induce triangular and rectangular nanoclusters. The most stable and metastable structures agree with the scanning tunneling microscopy measurements. The density of states exhibits a finite value at the Fermi level, a dip at ∼-0.2 eV, and a peak at ∼-0.6 eV, as observed in the experimental measurements of the tunneling conductance.

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Section: Resultssupporting

confidence: 63%

mentioning

confidence: 91%

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

Lin

Chang

Chen

et al. 2016

Phys. Chem. Chem. Phys.

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“…Bi 2 O 3 could be easy tailored through surface modifications both during and after its synthesis [ 26 , 52 , 53 ]. This property is very attractive for electrochemical applications but implies unneglectable consequences during contaminant adsorption in real groundwater and wastewater environments.…”

Section: Resultsmentioning

confidence: 99%

Defective Bismuth Oxide as Effective Adsorbent for Arsenic Removal from Water and Wastewater

Balint

Bartoli

Jagdale

et al. 2021

Toxics

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In this work, we report solid-state synthetized defective Bi2O3 containing Bi(V) sites as effective and recyclable arsenic adsorbent materials. Bi2O3 was extensively characterized, and structure-related adsorption processes are reported. Both As(V) and As(III) species-adsorption processes were investigated in a wide range of concentrations, pH values, and times. The effect of several competing ions was also tested together with the adsorbent recyclability.

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“…Although DFT predicts results slightly larger than in the experiment, it is clear that DFT provides a compelling physical picture of our electronic system. Chen et al [67] have studied adsorption of Bi atoms and clusters on graphene grown by epitaxy (MEG). They observed a characteristic peak, corresponding to the p-band of Bi, in the tunneling spectrum and upon Bi deposition, electron transfer from MEG to Bi ad-atom.…”

Section: Resultsmentioning

confidence: 99%

Charge Transfer and Photocurrent in Interfacial Junctions between Bismuth and Graphene

et al. 2018

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Graphene, the two dimensional monolayer of carbon, is an essential building block for advanced electronic applications. Graphene is often integrated with bulk conductors, metals and semiconductors, for optoelectronic applications. The semimetal bismuth, that shares many electronic properties with these other conductors, is interesting because like graphene, it is a gapless conductor of high electronic mobility with linear dispersion relations and low electronic density. We studied the doping of graphene by Bi and the interfacial electric dipole.Graphene Raman spectroscopy results show that there is a very large charge transfer between graphene and bismuth. This doping is larger than in the interfaces of graphene with metals such as Cu and semiconductors such as Si. Our findings are in good agreement with recent theoretical results for graphene bismuth interfaces. We also present a demonstration of zerobias photocurrent generation that is enabled by the electric dipole at the graphene bismuth interface.

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Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

Cited by 19 publications

References 37 publications

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

Substrate-induced structures of bismuth adsorption on graphene: a first principles study

Defective Bismuth Oxide as Effective Adsorbent for Arsenic Removal from Water and Wastewater

Charge Transfer and Photocurrent in Interfacial Junctions between Bismuth and Graphene

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