Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Duan, Chun‐Gang; Velev, Julian P.; Sabirianov, Renat; Mei, W.; Jaswal, S. S.; Tsymbal, Evgeny Y.

doi:10.1063/1.2901879

Cited by 145 publications

(134 citation statements)

References 32 publications

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“…Such complex interplay between the spin (magnetism), lattice (strain), charge (electrostatic) and orbit (e.g. charge-driven interfacial orbital hybridization [45][46][47][48][49][50] or reconstruction [51][52][53][54][55]) across the interface of the multiferroic heterostructure would be a very interesting but tough issue. -The mesoscale mechanism of such voltage-controlled magnetism in multiferroic heterostructures is also important.…”

Section: Discussionmentioning

confidence: 99%

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Shu

et al. 2014

Phil. Trans. R. Soc. A.

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The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology.

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Section: Discussionmentioning

confidence: 99%

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Shu

et al. 2014

Phil. Trans. R. Soc. A.

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“…First-principles calculations of the Fe/BaTiO 3 bilayer have shown that a reversal of the electric polarization of BaTiO 3 produces a sizeable change in the surface MCA energy of the Fe film [137].…”

Section: (B) Surface Magnetocrystalline Anisotropymentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

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144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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“…22 Alternatively, the interface magnetic anisotropy (and hence the magnetization orientation) may be tailored electronically by the ferroelectric polarization of an adjacent ferroelectric film. 23,24 This approach has a number of advantages. First, the effective electric field induced by the polarization charge at the interface may reach 1 GV/m, i.e., be much higher than the electric field produced in laboratory conditions.…”

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confidence: 99%

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

et al. 2012

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Electric field control of magnetization is one of the promising avenues for achieving high-density energy-efficient magnetic data storage. Ferroelectric materials can be especially useful for that purpose as a source of very large switchable electric fields when interfaced with a ferromagnet. Organic ferroelectrics, such as poly(vinylidene fluoride) (PVDF), have an additional advantage of being weakly bonded to the ferromagnet, thus minimizing undesirable effects such as interface chemical modification and/or strain coupling. In this work we use first-principles density functional calculations of Co/PVDF heterostructures to demonstrate the effect of ferroelectric polarization of PVDF on the interface magnetocrystalline anisotropy that controls the magnetization orientation. We show that switching of the polarization direction alters the magnetocrystalline anisotropy energy of the adjacent Co layer by about 50%, driven by the modification of the screening charge induced by ferroelectric polarization. The effect is reduced with Co oxidation at the interface due to quenching the interface magnetization. Our results provide a new insight into the mechanism of the magnetoelectric coupling at organic ferroelectric/ferromagnet interfaces and suggest ways to achieve the desired functionality in practice.

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Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface

Cited by 145 publications

References 32 publications

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Multi-ferroic and magnetoelectric materials and interfaces

Ferroelectric Control of Magnetocrystalline Anisotropy at Cobalt/Poly(vinylidene fluoride) Interfaces

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