2023
DOI: 10.1016/j.rinp.2023.106457
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Tailoring of the nonlinear optical rectification in vertically and laterally coupled InxGa1-xAs/GaAs quantum dots for Tera-hertz applications: Under In/Ga inter-diffusion, indium segregation, and strains effects

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Cited by 2 publications
(1 citation statement)
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“…Sargsian et al [29] studied cylindrical VCQDs built from InAs in a GaAs matrix under the effect of an intense laser field and calculated the absorption coefficient, the refractive index changes, and second-and third-harmonic generation at different temperatures and laser field parameters. Makhlouf et al [30] addressed the problem of calculating the nonlinear optical rectification for two vertically coupled layers of In x Ga 1−x As/GaAs, including lateral interaction with neighbor QDs. Their findings show that indium segregation into the wetting layer affects the optical response significantly.…”
Section: Introductionmentioning
confidence: 99%
“…Sargsian et al [29] studied cylindrical VCQDs built from InAs in a GaAs matrix under the effect of an intense laser field and calculated the absorption coefficient, the refractive index changes, and second-and third-harmonic generation at different temperatures and laser field parameters. Makhlouf et al [30] addressed the problem of calculating the nonlinear optical rectification for two vertically coupled layers of In x Ga 1−x As/GaAs, including lateral interaction with neighbor QDs. Their findings show that indium segregation into the wetting layer affects the optical response significantly.…”
Section: Introductionmentioning
confidence: 99%