Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation

En-nadir, Redouane; El-ghazi, Haddou; Leontie, Liviu; Tihtih, Mohammed; Zaki, Shrouk E.; Belaid, Walid; Cârlescu, Aurelian; Zorkani, Izeddine

doi:10.1016/j.physb.2023.414976

Cited by 7 publications

(3 citation statements)

References 40 publications

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“…Consequently, for k values spanning from 0 to N, the corresponding mesh nodes for a single QW can be determined as follows: the left barrier is located at z j = k * h b , the well region is positioned at z j = L + k * h w , and the right barrier is situated at z j = L + l + k * h b . Utilizing the FEM, we calculate the first and second derivative wave functions [26,43].…”

Section: Theory and Modelmentioning

confidence: 99%

“…In a symmetric GaAs coupled quantum well (CQW) heterostructure, Wilkes et al conducted calculations on spatially indirect exciton states while subjecting them to external electric and magnetic fields [25]. In optical property computations for quantum wells (QWs) and quantum dots (QDs), researchers commonly utilize a fixed radiative recombination lifetime (RRLT), leading to study inaccuracies [26][27][28][29][30][31][32]. Therefore, there is a critical need for a comprehensive investigation of the RRLT under varying conditions, including temperature, pressure, intense laser excitation, and electric/magnetic fields.…”

Section: Introductionmentioning

confidence: 99%

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Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

En-nadir,

Basyooni-M. Kabatas,

Tihtih

et al. 2023

Nanomaterials

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Ultra-thin quantum wells, with their unique charge confinement effects, are essential in enhancing the electronic and optical properties crucial for optoelectronic device optimization. This study focuses on theoretical investigations into radiative recombination lifetimes in nanostructures, specifically addressing both intra-subband (ISB: e-e) and band-to-band (BTB: e-hh) transitions within InGaN/GaN quantum wells (QWs). Our research unveils that the radiative lifetimes in ISB and BTB transitions are significantly influenced by external excitation, particularly in thin-layered QWs with strong confinement effects. In the case of ISB transitions (e-e), the recombination lifetimes span a range from 0.1 to 4.7 ns, indicating relatively longer durations. On the other hand, BTB transitions (e-hh) exhibit quicker lifetimes, falling within the range of 0.01 to 1 ns, indicating comparatively faster recombination processes. However, it is crucial to note that the thickness of the quantum well layer exerts a substantial influence on the radiative lifetime, whereas the presence of impurities has a comparatively minor impact on these recombination lifetimes. This research advances our understanding of transition lifetimes in quantum well systems, promising enhancements across optoelectronic applications, including laser diodes and advanced technologies in detection, sensing, and telecommunications.

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Section: Theory and Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

En-nadir,

Basyooni-M. Kabatas,

Tihtih

et al. 2023

Nanomaterials

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“…

, a ternary compound, exhibits outstanding traits—encompassing the solar spectrum (0.78 eV to 3.42 eV), high absorption, radiation resistance, thermal stability, and exceptional chemical robustness [ 19 , 20 ]. Moreover, the optical properties of InGaN/GaN systems under different internal and external conditions have been intensively investigated [ 21 , 22 , 23 , 24 , 25 , 26 ]. Optoelectronic devices employing these materials can experience degradation due to the strong integrated electric field (BEF), leading to a decline in overall performance.…”

Section: Introductionmentioning

confidence: 99%

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Abboudi,

EL Ghazi,

En-nadir

et al. 2024

Nanomaterials

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This paper presents a thorough numerical investigation focused on optimizing the efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) based on III-nitride materials. The optimization strategy encompasses manipulating confinement potential energy, controlling hydrostatic pressure, adjusting compositions, and varying thickness. The built-in electric fields in (In, Ga)N alloys and heavy-hole levels are considered to enhance the results’ accuracy. The finite element method (FEM) and Python 3.8 are employed to numerically solve the Schrödinger equation within the effective mass theory framework. This study reveals that meticulous design can achieve a theoretical photovoltaic efficiency of quantum-well intermediate-band solar cells (QW-IBSCs) that surpasses the Shockley–Queisser limit. Moreover, reducing the thickness of the layers enhances the light-absorbing capacity and, therefore, contributes to efficiency improvement. Additionally, the shape of the confinement potential significantly influences the device’s performance. This work is critical for society, as it represents a significant advancement in sustainable energy solutions, holding the promise of enhancing both the efficiency and accessibility of solar power generation. Consequently, this research stands at the forefront of innovation, offering a tangible and impactful contribution toward a greener and more sustainable energy future.

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Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing

Nakata,

Sasaki,

Kurai

et al. 2024

Physica Status Solidi (a)

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InGaN, a group‐III nitride semiconductor, is expected to be widely used in the field of optoelectronics, owing to its excellent physical properties. However, InGaN has various limitations. This study reports face‐to‐face annealing (FFA) using vapor‐phase and in‐plane mass transport to improve the surface flatness of an InGaN template. InGaN layers are grown on a GaN template that is grown on a c‐plane sapphire substrate using metal–organic vapor‐phase epitaxy. NH3‐assisted FFA is performed at 1050 °C for 20 min, causing V‐pits to vanish from the InGaN template despite their initial density of 3.3 × 108 cm−2. The surface condition of the lower InGaN layer is worse than that of the upper InGaN layer due to the FFA‐induced upward mass transport from the lower layer, thereby eliminating the V‐pits. Compositional analysis of the upper layer through Auger electron spectroscopy and energy‐dispersive X‐ray spectroscopy reveals In peaks despite high‐temperature annealing, thus confirming the presence of InGaN. The results of this study offer possibilities for future InGaN crystal growth and InGaN‐based device fabrication.

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Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation

Cited by 7 publications

References 40 publications

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity

Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness

Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing

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