Tailoring SnO2 Defect States and Structure: Reviewing Bottom-Up Approaches to Control Size, Morphology, Electronic and Electrochemical Properties for Application in Batteries

Abstract

Tin oxide (SnO2) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that varies as a function of its polymorph, i.e., rutile, cubic or orthorhombic. In this review, we survey the crystal and electronic structures, bandgap and defect states of SnO2. Subsequently, the significance of the defect states on the optical properties of SnO2 is overviewed. Furthermore, we examine the influence of growth methods on the morphology and phase stabilization of SnO2 for both thin-film deposition and nanoparticle synthesis. In general, thin-film growth techniques allow the stabilization of high-pressure SnO2 phases via substrate-induced strain or doping. On the other hand, sol–gel synthesis allows precipitating rutile-SnO2 nanostructures with high specific surfaces. These nanostructures display interesting electrochemical properties that are systematically examined in terms of their applicability to Li-ion battery anodes. Finally, the outlook provides the perspectives of SnO2 as a candidate material for Li-ion batteries, while addressing its sustainability.

Recent advances in two-dimensional materials as catalysts for the electrochemical reduction of carbon dioxide

“…To sum up, the bottom-up methods offer the opportunity to precisely control the desired properties, such as defects or doping. 18 , 50 2D materials with high crystal quality and uniformity can be produced by these methods, leading to enhanced electronic and mechanical properties. However, bottom-up methods usually involve complex synthesis processes, leading to time-consuming and technological problems.…”