Tailoring strain and lattice relaxation characteristics in InGaAs/GaAsP multiple quantum wells structure with phosphorus doping engineering

Hou, Chunge; Zou, Yonggang; Wang, Haizhu; Wang, Xinying; Xu, Ying; Wang, Quhui; He, Zhu; Fan, Jintao; Shi, Linlin; Xu, Li; Lin, Fen; Fang, Dan; Ma, Xiang

doi:10.1016/j.jallcom.2018.08.119

Cited by 9 publications

(3 citation statements)

References 39 publications

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“…When imaged in the MWIR/SWIR band, several line features can be observed that are absent for the NIR/vis imaging. They likely correspond to step flow stripes caused by the accumulation of strain …”

Section: Resultsmentioning

confidence: 99%

Gate-Tunable Multiband van der Waals Photodetector and Polarization Sensor

Shen,

Yang,

Patel

et al. 2024

ACS Nano

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A single photodetector with tunable detection wavelengths and polarization sensitivity can potentially be harnessed for diverse optical applications ranging from imaging and sensing to telecommunications. Such a device will require the combination of multiple material systems with different structures, band gaps, and photoelectrical responses, which is extremely difficult to engineer using traditional epitaxial films. Here, we develop a multifunctional and high-performance photosensor using all van der Waals materials. The device features a gate-tunable spectral response that is switchable between near-infrared/visible and short-/midwave infrared, as well as broad-band operation, at room temperature. The linear polarization sensitivity in the telecommunication O-band can also be directly modulated between horizontal, vertical, and nonpolarizing modes. These effects originate from the balance of photocurrent generation in two of the active layers that can be manipulated by an electric field. The photodetector features high detectivity (>109 cmHz1/2W–1) together with fast operation speed (∼1 MHz) and can be further exploited for dual visible and infrared imaging.

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Section: Resultsmentioning

confidence: 99%

Gate-Tunable Multiband van der Waals Photodetector and Polarization Sensor

Shen,

Yang,

Patel

et al. 2024

ACS Nano

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“…Tensile strain GaAsP barrier layers were employed to compen sate for the compressive strain in the InGaAs QW layer, and then the defect density wa reduced. The average strain is defined as [7] InGaAs InGaAs GaAs GaAs InGaAs GaAs ( ) / ( )…”

Section: Methodsmentioning

confidence: 99%

“…Choi et al found that a reduction in the growth temperature yielded highly strained epitaxial layers with decent optical properties presumably owing to the reduced formation and propagation of dislocations [6]. Hou et al studied the influence of different compositions of phosphorus in the barrier layer on the production of a high quality and smooth heterointerface of InGaAs/GaAsP QWs [7]. Dong et al investigated the influence of growth temperature on interfacial quality of InGaAs/GaAsP multiple quantum wells [8].…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

Zeng

Song

et al. 2021

Applied Sciences

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InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

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