Tailoring the coercivity in ferromagnetic ZnO thin films by 3d and 4f elements codoping

Abstract

Cluster free, Co (3d) and Eu (4f) doped ZnO thin films were prepared using ion implantation technique accompanied by post annealing treatments. Compared with the mono-doped ZnO thin films, the samples codoped with Co and Eu exhibit a stronger magnetization with a giant coercivity of 1200 Oe at ambient temperature. This was further verified through x-ray magnetic circular dichroism analysis, revealing the exchange interaction between the Co 3d electrons and the localized carriers induced by Eu 3þ ions codoping. The insight gained with modulating coercivity in magnetic oxides opens up an avenue for applications requiring non-volatility in spintronic devices.

Magnetic properties of Sm-doped rutile TiO2 nanorods

“…Subsequently, G.Z. Xing et al achieved even higher coercivity at room temperature when rare earth element Eu was co-doped with Co into ZnO [20].…”

Cd-composition induced effects on structure, optical and electrical properties of sputtered Zn1−xCdxO films

“…In recent years, nano-sized semiconductor materials have received considerable attention mainly due to their important potential applications, which include photovoltaic solar cells, transparent electrodes, gas sensors as well as other optoelectronic and spintronic devices [1][2][3][4][5][6][7]. Especially, ZnO has attracted considerable attention to the fabrication of short wavelength optoelectronic applications such as solar cells, light-emitting diodes (LEDs), photo-sensors and laser diodes (LDs) owing to its wide band gap of 3.37 eV and large free exciton binding energy (~60 meV) at room temperature [8][9][10].…”

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

“…[7][8][9][10][11] Indium Oxide (In 2 O 3 ) is one of the most promising oxide hosts for many applications in optoelectronics and transparent electronics. 12,13 There are several reports of room temperature ferromagnetism in In 2 O 3 -based DMSs, and most of ongoing research efforts focus on the transition metal (TM)-doped In 2 O 3 , [14][15][16][17][18] where TM ions occupy the corresponding lattice sites in the host with a dilute concentration to minimize the possibility of anti-ferromagnetic ordering.…”