Tailoring the composition of lead zirconate titanate by atomic layer deposition

Choi, Ju H.; Feng, Zhaochi; Perng, Ya-Chuan; Chang, Jane P.

doi:10.1116/1.4775789

Cited by 15 publications

(10 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2013, Choi et al also published results showing how the composition in the PbTiO 3 ‐PbZrO 3 ‐system was highly tunable in ALD . By using Pb(thd) 2 , Ti(O i Pr) 2 (thd) 2 and Zr(thd) 4 , Choi's group was able to precisely tune the composition around the morphotropic phase boundary, showing that it is indeed feasible to use ALD for obtaining very thin and conformal layers of complex materials.…”

Section: The Current Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

View full text Add to dashboard Cite

properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

show abstract

Section: The Current Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Also, there is typically a non‐linear relationship between growth per cycle (GPC), composition and cation cycle ratio 24 . Pb‐loss during the crystallization anneal has also been shown to affect film stoichiometry 25 . Despite these challenges, Hwang et al previously grew ALD PTO with promising ferroelectric properties (following post‐deposition anneal) for FRAM using lead bis(3‐N,N‐dimethyl‐2‐methyl‐2‐propanoxide) [Pb(DMAMP) 2 ] as the lead precursor, with the leakage current reported to be higher than 1 A/cm 2 at ±1 V and dissipation factor higher than 0.2 at ±2 V 26 .…”

Section: Introductionmentioning

confidence: 99%

“…24 Pb-loss during the crystallization anneal has also been shown to affect film stoichiometry. 25 Despite these challenges, Hwang et al previously grew ALD PTO with promising ferroelectric properties (following post-deposition anneal) for FRAM using lead bis(3-N,N-dimethyl-2-methyl-2-propanoxide) [Pb(DMAMP) 2 ] as the lead precursor, with the leakage current reported to be higher than 1 A/cm 2 at ±1 V and dissipation factor higher than 0.2 at ±2 V. 26 Watanabe et al previously reported ALD PZT using β-diketonate precursors for the Pb and Zr cations and titanium tetraisopropoxide (TTIP) for the Ti cation, though the leakage current density wasn't directly reported and the TTIP dose did not saturate. 24 Thus, there is the need for continued process development of ALD PZT toward improved electronic properties, lower leakage current density, and optimized precursor dose saturation.…”

mentioning

confidence: 99%

Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors

et al. 2020

View full text Add to dashboard Cite

Lead zirconate-titanate (PbZr x Ti 1−x O 3 or PZT) is a multifunctional ferroelectric and piezoelectric perovskite that is a solid-solution of lead titanate (PbTiO 3 or PTO) and lead zirconate (PbZrO 3 or PZO). 1 Additionally, PZT has a large electromechanical coupling coefficient, which tends to a maximum at compositions near the morphotropic phase boundary (MPB) or PbZr 0.52 Ti 0.48 O 3. 1 Near-MPB PZT has applications in commercial inkjet print heads 2-4 and emerging applications in piezoelectric microelectromechanical systems (PiezoMEMS). 5-7 Compositions of PZT that are rich in PTO have commercial applications in ferroelectric random access memory (FRAM) due to the high remnant polarization (P r) and comparably low coercive field (E c). 8 Hafnium can alloy with Pb-perovskites because it is in the same chemical group as Ti and Zr, and has a nearly identical ionic radius to Zr. 9 Indeed, PHT is considered a structural

show abstract

“…Due to the fact that the PZT was interfaced with MgO on both sides, the interfacial dead layer that is intrinsic to the electrode/dielectric boundary is expected to be negligible in our film. 39 PZT deposition was performed via ALD, 40,41 which has been previously shown to provide conformal atomically smooth ultra-thin films with precise control over composition and thickness. 42 MTJs with a pure MgO tunnel barrier were used as the reference sample and compared to the MTJs with the MgO/ PZT/MgO tunnel barrier (hereafter referred to as MgO MTJ and PZT MTJ, respectively).…”

mentioning

confidence: 99%

“…The synthesis of PZT thin film has been outlined in previous papers. 40,41 The PZT MTJ film stack was annealed at 200 C under vacuum both before the PZT deposition and after depositing the whole film stack. Since the PZT MTJ film stack was also in-situ annealed during the ALD process under 250 C, the MgO MTJs were annealed at 250 C for a fair comparison.…”

mentioning

confidence: 99%

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Chien

Wong

et al. 2016

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Compared with current-controlled magnetization switching in a perpendicular magnetic tunnel junction (MTJ), electric field-or voltage-induced magnetization switching reduces the writing energy of the memory cell, which also results in increased memory density. In this work, an ultrathin PZT film with high dielectric constant was integrated into the tunneling oxide layer to enhance the voltage-controlled magnetic anisotropy (VCMA) effect. The growth of MTJ stacks with an MgO/PZT/MgO tunnel barrier was performed using a combination of sputtering and atomic layer deposition techniques. The fabricated MTJs with the MgO/PZT/MgO barrier demonstrate a VCMA coefficient, which is $40% higher (19.8 6 1.3 fJ/V m) than the control sample MTJs with an MgO barrier (14.3 6 2.7 fJ/V m). The MTJs with the MgO/PZT/MgO barrier also possess a sizeable tunneling magnetoresistance (TMR) of more than 50% at room temperature, comparable to the control MTJs with an MgO barrier. The TMR and enhanced VCMA effect demonstrated simultaneously in this work make the MgO/PZT/MgO barrier-based MTJs potential candidates for future voltagecontrolled, ultralow-power, and high-density magnetic random access memory devices.

show abstract

Tailoring the composition of lead zirconate titanate by atomic layer deposition

Cited by 15 publications

References 39 publications

Functional Perovskites by Atomic Layer Deposition – An Overview

Functional Perovskites by Atomic Layer Deposition – An Overview

Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors

Enhanced voltage-controlled magnetic anisotropy in magnetic tunnel junctions with an MgO/PZT/MgO tunnel barrier

Contact Info

Product

Resources

About