“…W is preferred as a metal interconnect because it exhibits outstanding properties such as the highest melting point and the lowest thermal expansion among other candidate metals (Dellasega et al, 2012; Girault et al, 2013). The properties of W thin film, such as resistivity (Steinhögl et al, 2005), thermal conductance (Han et al, 2017), electromigration and diffusivity (Cauchois et al, 2012; Liu et al, 2014), as well as mechanical properties (Girault et al, 2013), are known to be inextricably meshed with their grain size, grain structure, and crystallographic orientation (Shen et al, 2000; El-Atwani et al, 2015) and are usually impaired by a reduction in the characteristic size, as device sizes continuously scale down. In particular, as grain boundaries critically affect the electron mobility, the nature of the misorientation and grain boundaries in nanocrystalline W thin films needs to be characterized quantitatively to ensure excellent circuit performance (Musil et al, 1995; Steinhögl et al, 2005).…”