2011
DOI: 10.1557/opl.2011.1264
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Tailoring the Crystallographic Texture and Electrical Properties of Inkjet-printed Interconnects for Use in Microelectronics

Abstract: In this paper, silver nanoparticles with a mean diameter of 40 nm are studied for future applications in microelectronic devices. The enhanced diffusivity of nanoparticles is exploited to fabricate electrical interconnects at low temperature. Sintering condition has been tuned to tailor the grain size so that electrical resistivity can be lowered down to 3.4 µOhm•cm. In this study, a {111}-textured gold thin film has been used to increase diffusion routes. The combined effects of the substrate crystalline orie… Show more

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Cited by 2 publications
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“…W is preferred as a metal interconnect because it exhibits outstanding properties such as the highest melting point and the lowest thermal expansion among other candidate metals (Dellasega et al, 2012; Girault et al, 2013). The properties of W thin film, such as resistivity (Steinhögl et al, 2005), thermal conductance (Han et al, 2017), electromigration and diffusivity (Cauchois et al, 2012; Liu et al, 2014), as well as mechanical properties (Girault et al, 2013), are known to be inextricably meshed with their grain size, grain structure, and crystallographic orientation (Shen et al, 2000; El-Atwani et al, 2015) and are usually impaired by a reduction in the characteristic size, as device sizes continuously scale down. In particular, as grain boundaries critically affect the electron mobility, the nature of the misorientation and grain boundaries in nanocrystalline W thin films needs to be characterized quantitatively to ensure excellent circuit performance (Musil et al, 1995; Steinhögl et al, 2005).…”
Section: Introductionmentioning
confidence: 99%
“…W is preferred as a metal interconnect because it exhibits outstanding properties such as the highest melting point and the lowest thermal expansion among other candidate metals (Dellasega et al, 2012; Girault et al, 2013). The properties of W thin film, such as resistivity (Steinhögl et al, 2005), thermal conductance (Han et al, 2017), electromigration and diffusivity (Cauchois et al, 2012; Liu et al, 2014), as well as mechanical properties (Girault et al, 2013), are known to be inextricably meshed with their grain size, grain structure, and crystallographic orientation (Shen et al, 2000; El-Atwani et al, 2015) and are usually impaired by a reduction in the characteristic size, as device sizes continuously scale down. In particular, as grain boundaries critically affect the electron mobility, the nature of the misorientation and grain boundaries in nanocrystalline W thin films needs to be characterized quantitatively to ensure excellent circuit performance (Musil et al, 1995; Steinhögl et al, 2005).…”
Section: Introductionmentioning
confidence: 99%
“…While densification usually tends to involve bulk diffusion routes, non-densifying surface diffusions mechanisms are easily activated by temperature. 7111 Previous results have been reported on the impact of sintering temperature and time on the final microstructure of silver nanoparticles [9,10]. In this study, fast sintering techniques are explored for low temperature initiation of densifying regimes.…”
Section: Introductionmentioning
confidence: 99%