Tailoring the electrical conductivity of GaAs by nitrogen incorporation

Abstract

We investigate the electrical conductivity of the dilute nitride alloy GaAs(1-x)N(x), focusing on the range of concentrations of N over which this material system behaves as a good conductor. We report a large increase of the resistivity for x>0.2% and a strong reduction of the electron mobility, μ, at x∼0.1%. In the ultra-dilute regime (x∼0.1%) and at low electric fields (<1 kV cm(-1)), the electrical conductivity retains the characteristic features of electron transport through extended states, albeit with relatively low mobility (μ∼0.1 m(2) V(-1) s(-1) at T = 293 K) due to scattering of electrons by N atoms. In contrast, at large electric fields (>1 kV cm(-1)), the conduction electrons gain sufficient energy to approach the energy of the resonant N level, where they become spatially localized. This resonant electron localization in an electric field (RELIEF) leads to negative differential velocity. The RELIEF effect could be observed in other III-N-V compounds, such as InAs(1-x)N(x) and InP(1-x)N(x), and has potential for applications in terahertz electronics.

Machine learning assisted GaAsN circular polarimeter

“…where e is the electron charge, µ e = 300 cm 2 Vs −1 , and µ hh = 50 cm 2 Vs −1 [81][82][83][84][85][86] are the electron, light hole and heavy hole mobilities. In contrast to equation ( 2), the exact Drude expression for the longitudinal conductivity contain magnetic field-dependent terms.…”

Performance of a nitrogen implanted large aperture THz emitter

“…Recently diluted nitrogen alloy GaAs 1−x N x was obtained by nitrogen implantation of GaAs. GaAs 1−x N x has very interesting optoelectronic properties like the anomalously strong band gap bowing [5] and moderate resistivity [6]. Nitrogen implanted n-GaAs was used for making ultrafast photodetectors which displayed same temporal resolution as the photodetectors made of LTG GaAs but with superior electrical properties [7].…”