2017
DOI: 10.1021/acs.jpcc.7b07776
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Tailoring the Electronic Band Gap and Band Edge Positions in the C2N Monolayer by P and As Substitution for Photocatalytic Water Splitting

Abstract: Exploiting earth-abundant and low-cost photocatalysts for high efficiency photocatalytic water splitting is of profound significance. Herein, we report an improved photocatalytic water splitting activity by P and As substitution at the N-site in the C2N monolayer using state-of-the-art hybrid density functional calculations. Our results show that the band gap can be reduced in C2N by increasing the concentrations of P and As substitution, and at the same time the obtained band gap value is higher than the free… Show more

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Cited by 88 publications
(31 citation statements)
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“…With the consideration of the difference of 1.23 eV [44] between water redox potentials during the water redox reactions, the oxygen potential (O2/H2O) is calculated by: EO2/H2O= EH+/H2− 1.23 eV = −5.67 eV + pH × 0.059 eV. The method has been successfully applied to predict the photocatalytic properties of P and As doped C2N monolayer [45], CdS/ZnSe heterostructure [46], and (Bule P)/BSe heterostructure [47] with considering the effect of pH on the standard redox potentials with respect to the vacuum level.…”
Section: Resultsmentioning
confidence: 99%
“…With the consideration of the difference of 1.23 eV [44] between water redox potentials during the water redox reactions, the oxygen potential (O2/H2O) is calculated by: EO2/H2O= EH+/H2− 1.23 eV = −5.67 eV + pH × 0.059 eV. The method has been successfully applied to predict the photocatalytic properties of P and As doped C2N monolayer [45], CdS/ZnSe heterostructure [46], and (Bule P)/BSe heterostructure [47] with considering the effect of pH on the standard redox potentials with respect to the vacuum level.…”
Section: Resultsmentioning
confidence: 99%
“…4a shows that the bandgap of C 2 N is 2.46 eV, which is consistent with a previous report. 60 After decoration by the B and P atoms, the bandgap decreases to 0.9 eV, which is narrow (Fig. 4b).…”
Section: Resultsmentioning
confidence: 97%
“…However, the introduction of high nitrogen content of C 3 N 5 requires modification of the C 3 N 4 triazine network, which induces a level of difficulty during its synthesis 43 . The recent rise of C 2 N materials has been known to endow a higher specific surface area, thermal stability, and conductivity when compared to C 3 N 4 , rendering it a complementary substitute in a multitude of applications such as adsorption, electrocatalysis, and photocatalysis 44–46 . As such, the emergence of carbon nitride allotropes represents a new paradigm of nanoengineering through chemical composition tuning.…”
Section: Introductionmentioning
confidence: 99%