Tailoring the electronic properties of GaAs/AlAs superlattices by InAs layer insertions

Patanè, A.; Sherwood, D.; Eaves, L.; Fromhold, T.M.; Henini, M.; Main, P. C.; Hill, G.

doi:10.1063/1.1496140

Cited by 37 publications

(27 citation statements)

References 11 publications

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“…This ensures that the edge of the miniband lies close to the Fermi level in the emitter contact, which (a) facilitates electron injection into the miniband, (b) ensures that the miniband gap energy has an extremely large value of 240 meV. This suppresses inter-band tunnelling [22] and thereby ensures that a single band transport picture is appropriate.…”

Section: Introductionmentioning

confidence: 99%

“…The unusual feature is that at the centre of each GaAs quantum well, there is an InAs monolayer, which produces a notch in the conduction band edge [22]. Since this notch coincides with the antinode in the ground state wave function of the quantum well, its effect is to lower the energy of the first miniband down to the bottom of the quantum well.…”

Section: Introductionmentioning

confidence: 99%

“…We included electron scattering in our calculations within the relaxation time approximation, using a scattering time τ = 200 fs determined from experiment [22]. When the magnetic field is applied along the SL axis, the v d (F ) curve (lower trace in Fig.…”

Section: Drift-velocity Versus Electric Field Curvesmentioning

confidence: 99%

“…To demonstrate this effect, we consider a novel type of GaAs/InAs/AlAs SL structure [22]. The unusual feature is that at the centre of each GaAs quantum well, there is an InAs monolayer, which produces a notch in the conduction band edge [22].…”

Section: Introductionmentioning

confidence: 99%

“…The SL period a = 8 nm, the miniband width ∆ = 13.5 meV and the density of n-type doping in the SL layers is 3 × 10 16 cm −3 [22]. To investigate the dynamics of electrons in the miniband, we used the semiclassical equations of motion v = ∂E(p)/∂p, and dp/dt = −e[F + (v × B)], where v and p are, respectively, the electron's velocity and crystal momentum, the electron energy…”

Section: Introductionmentioning

confidence: 99%

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Stochastic Carrier Dynamics in Semiconductor Superlattices

et al. 2006

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We explore a new regime of hot carrier dynamics, in which electrons in a superlattice miniband exhibit a unique type of stochastic motion when a magnetic field is tilted at an angle θ to the superlattice axis. Remarkably, the dynamics of a miniband electron in a tilted magnetic field reduce to a one-dimensional simple harmonic oscillator, of angular frequency ωC cos θ, where ω C is the cyclotron frequency, driven by a time-dependent plane wave whose angular frequency equals the Bloch frequency ωB. At bias voltages for which ω B = nω C cos θ, where n is an integer, the electron orbits change from localised Bloch-like trajectories to unbounded stochastic orbits, which diffuse rapidly through intricate web patterns in phase space. To quantify how these webs affect electron transport, we make drift-diffusion calculations of the current-voltage curves including the effects of space-charge build up. When the magnetic field is tilted, our simulations reveal a large resonant peak, which originates from stochastic delocalisation of the electron orbits. We show that the corresponding quantised eigenstates change discontinuously from a highly localised character when the system is off resonance to a fully delocalised form when the resonance condition is satisfied.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Drift-velocity Versus Electric Field Curvesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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