Tailoring the epitaxial growth of oriented Te nanoribbon arrays

Li, Jie; Zhang, Junrong; Chu, Junwei; Liu, Yang; Zhao, Xinxin; Zhang, Yan; Liu, Tong; Lü, Yang; Chen, Cheng; Hou, Xingang; Long, Fang; Xu, Yi‐Jun; Wang, Junyong; Zhang, Kai

doi:10.1016/j.isci.2023.106177

Cited by 3 publications

(2 citation statements)

References 33 publications

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“…[ 14–16 ] Among them, crystalline 2D Te is heavily studied since it not only possesses suitable bandgap and high mobility of 1755 cm 2 V −1 s −1 (room temperature), but is also highly environmentally adaptable together with low‐cost manufacturing strategies. [ 17–21 ] The attractive potential of Te for short‐wave infrared (SWIR) photodetection, large‐scale circuits, and future smart signal processing systems has also been demonstrated in our earlier studies. [ 10,22,23 ] However, high noise and relatively poor specific detectivity ( D *) is still limited by the large dark current in Te‐based photodetectors originating from its narrow bandgap.…”

Section: Introductionmentioning

confidence: 95%

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Wang,

Huang,

Zha

et al. 2023

Advanced Optical Materials

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Large dark current at room temperature has long been the major bottleneck that impedes the development of high‐performance infrared photodetectors toward miniaturization and integration. Although infrared photodetectors based on layered 2D narrow bandgap semiconductors have shown admirable advantages compared with those based on conventional compounds, which typically suffer from the expensive cryogenic operation, it is still urgent to develop a simple but effective strategy to further reduce the dark current. Herein, a tellurium (Te)‐based infrared photodetector is reported with specifically designed asymmetric electrical contact area. The deliberately introduced asymmetric electrical contact raises the electric field intensity difference in the Te channel near the drain and the source electrodes, resulting in the spontaneous asymmetric carrier diffusion under global infrared light illumination under zero bias. Specifically, the Te‐based photodetector presents promising detector performance at room temperature including a low dark current of ≈1 nA, an ultrahigh photocurrent/dark current ratio of 1.57 × 104, a high specific detectivity (D*) of 3.24 × 109 Jones, and a relatively fast response speed of ≈720 µs at zero bias. The results prove that the simple design of asymmetric electrical contact areas can provide a promising solution to high‐performance 2D semiconductor‐based infrared photodetectors working at room temperature.

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Section: Introductionmentioning

confidence: 95%

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Wang,

Huang,

Zha

et al. 2023

Advanced Optical Materials

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“…Nano-tellurium has promising applications, including antimicrobial [ 11 , 12 ], electronic, and optoelectronic [ 13 ] uses. Nano-tellurium (nano-Te) can be found in many forms such as nano-Te structures [ 13 ], nano-Te wires [ 14 ], nano-Te tubes [ 15 ], and nano-Te ribbons [ 16 ]. Nano-Te can be made with chemical methods along with biological and green methods that are considered eco-friendly.…”

Section: Introductionmentioning

confidence: 99%

Tellurium and Nano-Tellurium: Medicine or Poison?

Sári,

Ferroudj,

Semsey

et al. 2024

Nanomaterials

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Tellurium (Te) is the heaviest stable chalcogen and is a rare element in Earth’s crust (one to five ppb). It was discovered in gold ore from mines in Kleinschlatten near the present-day city of Zlatna, Romania. Industrial and other applications of Te focus on its inorganic forms. Tellurium can be toxic to animals and humans at low doses. Chronic tellurium poisoning endangers the kidney, liver, and nervous system. However, Te can be effective against bacteria and is able to destroy cancer cells. Tellurium can also be used to develop redox modulators and enzyme inhibitors. Soluble salts that contain Te had a role as therapeutic and antimicrobial agents before the advent of antibiotics. The pharmaceutical use of Te is not widespread due to the narrow margin between beneficial and toxic doses, but there are differences between the measure of toxicity based on the Te form. Nano-tellurium (Te-NPs) has several applications: it can act as an adsorptive agent to remove pollutants, and it can be used in antibacterial coating, photo-catalysis for the degradation of dyes, and conductive electronic materials. Nano-sized Te particles are the most promising and can be produced in both chemical and biological ways. Safety assessments are essential to determine the potential risks and benefits of using Te compounds in various applications. Future challenges and directions in developing nano-materials, nano-alloys, and nano-structures based on Te are still open to debate.

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Hybrid Density Functional Study on the p-Type Conductivity Mechanism in Intrinsic Point Defects and Group V Element-Doped 2D β-TeO₂

Wang,

Zheng,

Kong

et al. 2024

ACS Appl. Mater. Interfaces

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The newly discovered two-dimensional (2D) β-TeO 2 possesses extraordinarily high p-type carrier mobility and demonstrates immense potential in the electronics field. However, current research on its p-type conductivity mechanisms and the modifications of element doping remains relatively insufficient. In this study, the intrinsic point defects and extrinsic element doping in monolayer β-TeO 2 are comprehensively analyzed to probe the potential sources of the intrinsic p-type conductivity and the extrinsic p-type doping possibility in 2D β-TeO 2 through hybrid density functional calculations. Our results reveal that the vacancy defects with low formation energies have deep transition levels and thus cannot be used as sources of unintentional p-type conductivity in 2D β-TeO 2 . The investigations and discussions via Group V element doping modifications in 2D β-TeO 2 indicate that bismuth (Bi) doping can easily and significantly enhance the p-type conductivity of 2D β-TeO 2 under the presence of O-rich, which can be achieved experimentally. Furthermore, Bi doping can significantly increase carrier mobility without seriously affecting the electronic structure. The finding shows that the Bi element is an ideal dopant candidate for a p-type modification in 2D β-TeO 2 . Our calculations pave an alternative strategy to achieve the realization of superior p-type conductivity in 2D β-TeO 2 .

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Tailoring the epitaxial growth of oriented Te nanoribbon arrays

Cited by 3 publications

References 33 publications

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Tellurium and Nano-Tellurium: Medicine or Poison?

Hybrid Density Functional Study on the p-Type Conductivity Mechanism in Intrinsic Point Defects and Group V Element-Doped 2D β-TeO₂

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Tailoring the epitaxial growth of oriented Te nanoribbon arrays

Cited by 3 publications

References 33 publications

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

Tellurium and Nano-Tellurium: Medicine or Poison?

Hybrid Density Functional Study on the p-Type Conductivity Mechanism in Intrinsic Point Defects and Group V Element-Doped 2D β-TeO2

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Product

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About

Hybrid Density Functional Study on the p-Type Conductivity Mechanism in Intrinsic Point Defects and Group V Element-Doped 2D β-TeO₂