?-TaN as a Reference Material for the Determination of High Nitrogen Contents

Gruner, W.; Wollein, B.; Lengauer, W.

doi:10.1007/s00604-003-0169-z

Cited by 13 publications

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“…The stoichiometric e-TaN (with an O-content of 0.01-0.05 wt% in the bulk) was chosen as the standard for N and Ta because i) it consists of the same two main elements as the high-pressure products, ii) it is a ''line compound'', i.e., a Ta-nitride with a very narrow homogeneity range of less than 0.4 at% of N, and iii) it has a high N:Ta ratio when compared with other certified N standards. [36] To cross-check the nitrogen analysis with a different standard, we also used stoichiometric Ce 3 Si 6 N 11 . [37] Bulk Ta 2 O 5 was chosen as the oxygen standard in order to keep matrix effects as small as possible.…”

Section: Full Papermentioning

confidence: 99%

High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U₂S₃ Structure

Zerr

Miehe

et al. 2009

Adv Funct Materials

105

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Among binary compounds, there is a high potential for discovery of novel members (polymorphic phases or compounds) of the nitrides of transition metals group due to a pronounced dependence of the oxidation state of the metals (M) on pressure. The power of high pressure–high temperature (HP‐HT) route for synthesis of binary nitrides has already been demonstrated by the discovery of cubic nitrides of the group 4 and 14 elements, of crystalline polymorphs of P3N5, and by reports on formation of four noble metal nitrides. It is anticipated that such HP products exhibit, in addition to enhanced elastic and mechanical behavior, other functional properties making them interesting for industrial applications. Here, HP–HT synthesis research is extended to nitrides of group 5 elements, resulting in the discovery of a novel hard tantalum nitride, exhibiting U2S3 structure: η‐Ta2N3 (Pbnm, a = 8.1911(17) Å, b = 8.1830(17) Å, c = 2.9823(3) Å). The stoichiometry is supported by two independent means, verifying that η‐Ta2N3 is the first thermodynamically stable transition metal nitride with a N:M ratio exceeding 4:3. Due to its high hardness and peculiar texture (needle‐like and granular crystallites), η‐Ta2N3 may find practical applications as a hard fracture resistant material.

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Section: Full Papermentioning

confidence: 99%

High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U₂S₃ Structure

Zerr

Miehe

et al. 2009

Adv Funct Materials

105

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“…It is easy to find standards with ppm and tens of ppm in steel, but at the percent level Si 3 N 4 (N, 39.94 wt%) is probably one the rare marketed nitride standards. At lower percentages, ε-TaN (N 7.18 wt%) remains a convenient calibration standard [ 26 ]. This phase is prepared by reaction in an autoclave from high-purity tantalum foil under N 2 pressure at high temperatures (close to 1900 °C) and has the main advantage of presenting a defined nitrogen content.…”

Section: Chemical Methodsmentioning

confidence: 99%

Determining the Nitrogen Content in (Oxy)Nitride Materials

Tessier

2018

Materials

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Nitrogen (and also oxygen) determination has become an important parameter to characterize (oxy)nitride materials for many properties and applications. Analyzing such anions with accuracy is still a challenge for some materials. However, to date, a large panel of methodologies is available to answer this issue with relevant results, even for thin films. Carrier gas hot extraction techniques and electron probe microanalysis with wavelength dispersive spectroscopy (EPMA-WDS) look attractive to analyze bulk materials and thin films, respectively. This paper gathers several techniques using chemical and physical routes to access such anionic contents. Limitations and problems are pointed out for both powders and films.

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“…Nitrogen was measured as N 2 by thermal conductivity and oxygen as CO 2 by infrared detection. The apparatus was calibrated using N 2 and CO 2 gas (purity ≥99.95%) as well as ε-TaN as a nitrogen standard . At least two analyses were performed in the same conditions for each sample.…”

Section: Methodsmentioning

confidence: 99%

Study of the Thermal Nitridation of Nanocrystalline Ti(OH)₄ by X-ray and in Situ Neutron Powder Diffraction

et al. 2012

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In situ neutron diffraction measurements of nanocrystalline titanium oxynitrides were performed, as a function of temperature and time, to explore the nitrogen/oxygen substitution mechanism occurring during their synthesis by reaction of gaseous ammonia with nanocrystalline Ti(OH)(4). These neutron diffraction experiments are supported by chemical analysis and X-ray diffraction, allowing the description of the structural variations and ordering process between the Ti(O/N)(2) anatase and the Ti(O/N) rock-salt phases. Our results show that the formation of the Ti(O/N) rock-salt phase goes along with the creation of vacancies on the Ti sites and that the N/O substitution proceeds but without N/O ordering.

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?-TaN as a Reference Material for the Determination of High Nitrogen Contents

Cited by 13 publications

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High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U₂S₃ Structure

High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U₂S₃ Structure

Determining the Nitrogen Content in (Oxy)Nitride Materials

Study of the Thermal Nitridation of Nanocrystalline Ti(OH)₄ by X-ray and in Situ Neutron Powder Diffraction

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?-TaN as a Reference Material for the Determination of High Nitrogen Contents

Cited by 13 publications

References 0 publications

High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U2S3 Structure

High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U2S3 Structure

Determining the Nitrogen Content in (Oxy)Nitride Materials

Study of the Thermal Nitridation of Nanocrystalline Ti(OH)4 by X-ray and in Situ Neutron Powder Diffraction

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High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U₂S₃ Structure

High‐Pressure Synthesis of Tantalum Nitride Having Orthorhombic U₂S₃ Structure

Study of the Thermal Nitridation of Nanocrystalline Ti(OH)₄ by X-ray and in Situ Neutron Powder Diffraction