Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997
DOI: 10.1109/pvsc.1997.654241
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Tandem GaSb/InGaAsSb thermophotovoltaic cells

Abstract: Computer modelling of a tandem TPV system has been carried out. The monolithic GaSb/lnSaAsSb tandem TPV devices have been designed and fabricated by LPE.

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Cited by 13 publications
(10 citation statements)
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“…Given that the extensive shortage of the non-radiative recombination parameters for Sb-based alloys, an ideal (lowest) dark current density J i d , only limited by the radiative recombination process, is employed for each subcell, yielding [12,27] …”
Section: Model and Calculationmentioning
confidence: 99%
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“…Given that the extensive shortage of the non-radiative recombination parameters for Sb-based alloys, an ideal (lowest) dark current density J i d , only limited by the radiative recombination process, is employed for each subcell, yielding [12,27] …”
Section: Model and Calculationmentioning
confidence: 99%
“…Following this scheme, device efficiency larger than 40% has been demonstrated in GaAs-based tandem cells [10,11]. However, little was known about the feasible tandem TPV converters [12][13][14][15] due to the shortage of high quality, lattice-matched narrow bandgap materials. For instance, Wehrer and coauthors [14,15] previously fabricated a GaInAs/InAsP tandem TPV converter, achieving the device open-circuit voltage (V OC ) up to 0.6 V. However, besides the expensive InP substrate they used, complex buffer layers should be employed to relax the latticemismatched strain between the subcells, thus creating some unexpected difficulties for the cost-effective TPV electricity generation.…”
Section: Introductionmentioning
confidence: 99%
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“…However, this study demonstrates that this drawback may be overcome by using multijunction TPV cells. Although experimental work on multijunction TPV cell structures has been presented previously [38][39][40][41][42], a thorough theoretical analysis on their potential for TPV energy conversion is missing. This paper presents a global optimization of single junction and multijunction TPV devices comprising cut-off spectral control elements.…”
Section: Introductionmentioning
confidence: 99%
“…Andreev et al. [93] reported one of the earlier versions of a tandem TPV cell in the InGaAsSb/GaSb materials system ( Figure 34). This device was in part an adaptation of components first developed for tandem concentrator solar cells.…”
mentioning
confidence: 99%