Tandem solar cells with Cu(In,Ga)S2 top cells on ZnO coated substrates

Kaigawa, R.; Funahashi, Kazuma; Fujie, Ryuhei; Wada, Takahiro; Merdes, S.; Caballero, R.; Klenk, R.

doi:10.1016/j.solmat.2010.06.029

Cited by 37 publications

(21 citation statements)

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“…Solar cells based on CIGS absorbers have currently achieved the highest efficiency for low‐cost thin film PV technologies with a record efficiency of 22.9% . CIGS has been used in tandem applications by stacking individual devices with different bandgap absorbers of CIGS‐CdTe, CIGS‐dye sensitized, CIGS‐CGS, CIGS‐CIGS, and recently CIGS‐perovskite with efficiencies exceeding 20% . The record tandem solar cell based on CI(G)S as a bottom cell reported an efficiency of 6.0% for CIGS and 4.8% for CIS under a 16.1% perovskite upper high bandgap cell (bandgap of 1.57 eV).…”

Section: Introductionmentioning

confidence: 99%

High‐performance low bandgap thin film solar cells for tandem applications

Elanzeery

Babbe

Melchiorre

et al. 2018

Progress in Photovoltaics

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Thin film tandem solar cells provide a promising approach to achieve high efficiencies. | INTRODUCTIONCurrently, there is an increasing demand to provide cheap high-efficiency solar cells that can exceed state-of-the-art single-junction solar cell technologies. One approach to achieve this is through using tandem solar cells. Tandem or multijunction solar cells have the potential to achieve efficiencies of more than 30%. set the full illumination intensity for the IVT measurements. A mechanical shutter was used to allow dark and illuminated measurements within the same experiment. Admittance measurements were performed in the dark, after keeping the sample mounted in the dark at room temperature for 1 night, with an LCR meter using the same cryostat setup. All characterizations were performed after adding the ARC layer. For the extraction of the quasi-Fermi-level splitting (qFLS), photoluminescence (PL) spectra were recorded on CdS-covered absorbers in a home-built calibrated setup at room temperature under continuous monochromatic illumination with 660-nm wavelength. 27,28The spectral and absolute corrected PL spectra are converted into energy space. In a semilogarithmic plot, the high-energy wing of the PL peak is fitted linearly and is evaluated by means of the simplified Planck's generalized law, 29 providing the qFLS as well as the temperature. Figure 1A. Figure 1 A also presents the electrical behavior under light for CIS_0.95 measured in-house. Table 1 as a function of absorber bandgap are shown in Figure 2. All IV measurements were performed after adding an ARC layer.In Figure 1A, it is observed that V OC increases and J summarized in Table 1, it can be concluded that the cells lose more in recombination than in incomplete absorption (η el < η op ). Moreover, the

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Section: Introductionmentioning

confidence: 99%

High‐performance low bandgap thin film solar cells for tandem applications

Elanzeery

Babbe

Melchiorre

et al. 2018

Progress in Photovoltaics

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“…Apart from those limitations, CZTS and CZTSe solar cells have its own problems, such as, the aggressive reaction between the CZTS(e) and the standard Mo back contact layer during thermal processing, and the large Sn losses arise from instabilities in the surface of the CZTS(e) layer during annealing . These issues can be ameliorated by introducing a superstrate configuration in solar cells, which would improve back contact designs and realize tandem device structure, and lead to a much better tradeoff between sheet resistance and transparency . Some efforts have been made with the superstrate solar cells of CZTS and CZTSSe especially by low‐cost non‐vacuum processes.…”

Section: Introductionmentioning

confidence: 99%

A facile non‐vacuum‐based Cu₂ZnSnSe₄ superstrate solar cell with 2.44% device efficiency

Zhang

Sun

Wang

et al. 2016

Physica Status Solidi (a)

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Cu 2 ZnSnSe 4 (CZTSe) solar cell with a facile superstrate structure of carbon/CZTSe/CdS/ITO was fabricated entirely by non-vacuum processes. The influence of selenization temperature on the composition of CZTSe layer was briefly investigated. Compared with current superstrate-type CZTS(e) solar cells, the present CZTSe superstrate solar cell exhibited a higher power conversion efficiency of 2.44%.

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“…Also, high‐temperature annealing of the ZnO has led to higher electron mobilities, leading to a much better trade‐off between sheet resistance and transparency in a solar cell device . If successfully applied, the superstrate configuration is able to offer additional advantages by allowing an easier implementation of light trapping, improved back contact design, or the realization of tandem device structures . However, unlike the experience with CdTe solar cells, CIGSe solar superstrate solar cells so far have not reached conversion efficiencies larger than 13%, compared with that of the more than 20% demonstrated for the substrate configuration .…”

Section: Introductionmentioning

confidence: 99%

Cu(In,Ga)Se₂ superstrate solar cells: prospects and limitations

Heinemann

Efimova

Klenk

et al. 2014

Progress in Photovoltaics

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Superstrate solar cells were prepared by thermal evaporation of Cu(In,Ga)Se2 onto ZnO coated glass substrates. For the first time, photo-conversion efficiencies above 11% were reached without the necessity of additional light soaking or forward biasing of the solar cell. This was achieved by modifying the deposition process as well as the sodium doping. Limitations of the superstrate device configuration and possible ways to overcome these were investigated by analyzing the hetero-interface with electron microscopy and X-ray photoemission spectroscopy measurements, combined with capacitance spectroscopy and device simulations. A device model was derived that explains how on the one hand the GaO x , which forms at the CIGSe/ ZnO interface, reduces the interface recombination. On the other hand how it limits the efficiency by acting as an electron barrier at the hetero-interface presumably because of a high density of negatively charged acceptor states like Cu Ga . The addition of sodium enhances the p-type doping of the absorber but also increases the net doping within the GaO x . Hence, a trade-off between these two effects is required. The conversion efficiency was found to decrease over time, which can be explained in our model by field-induced diffusion of sodium cations out from the GaO x layer. The proposed device model is able to explain various effects frequently observed upon light soaking and forward biasing of superstrate devices.

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Tandem solar cells with Cu(In,Ga)S2 top cells on ZnO coated substrates

Cited by 37 publications

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High‐performance low bandgap thin film solar cells for tandem applications

High‐performance low bandgap thin film solar cells for tandem applications

A facile non‐vacuum‐based Cu₂ZnSnSe₄ superstrate solar cell with 2.44% device efficiency

Cu(In,Ga)Se₂ superstrate solar cells: prospects and limitations

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Tandem solar cells with Cu(In,Ga)S2 top cells on ZnO coated substrates

Cited by 37 publications

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High‐performance low bandgap thin film solar cells for tandem applications

High‐performance low bandgap thin film solar cells for tandem applications

A facile non‐vacuum‐based Cu2ZnSnSe4 superstrate solar cell with 2.44% device efficiency

Cu(In,Ga)Se2 superstrate solar cells: prospects and limitations

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A facile non‐vacuum‐based Cu₂ZnSnSe₄ superstrate solar cell with 2.44% device efficiency

Cu(In,Ga)Se₂ superstrate solar cells: prospects and limitations