Superconducting tantalum disulfide nanowires have been synthesised by Surface Assisted Chemical Vapour Transport (SACVT) methods and their crystal structure, morphology and stoichiometry studied by powder X-ray diffraction (PXD), scanning electron microscopy / energy 10 dispersive X-ray spectroscopy (SEM, EDX), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and nanodiffraction. The evolution of morphology, stoichiometry and structure of materials grown by SACVT methods in the Ta-S system with reaction temperature was investigated systematically. High aspect ratio, superconducting disulfide nanowires are produced at intermediate reaction temperatures (650 °C