Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

Chaneliere, C.; Autran, Jean‐Luc; Devine, R. A. B.; Balland, B.

doi:10.1016/s0927-796x(97)00023-5

Cited by 640 publications

(402 citation statements)

References 238 publications

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“…The density of Ta metal is 16.65 g/cm 3 and the theoretical density of crystalline Ta 2 O 5 ͑hexagonal͒ is ϳ8.3 g/cm 3 . 44 The density of amorphous Ta 2 O 5 varies over a considerable range depending on the fabrication conditions. 44 Based on these density values, the volume of crystalline Ta 2 O 5 is ϳ2.45 times that of Ta metal for the same number of Ta atoms.…”

Section: Resultsmentioning

confidence: 99%

“…44 The density of amorphous Ta 2 O 5 varies over a considerable range depending on the fabrication conditions. 44 Based on these density values, the volume of crystalline Ta 2 O 5 is ϳ2.45 times that of Ta metal for the same number of Ta atoms. To calculate the total thickness of the oxide, we used both a conical shape as observed by AFM and a cylindrical shape for the Ta oxide dot because of the reason mentioned above.…”

Section: Resultsmentioning

confidence: 99%

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Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

Kim¹,

Zhao²,

Uosaki³

2003

Journal of Applied Physics

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Nanosized patterns of tantalum oxide were fabricated on a tantalum substrate by applying a potential pulse utilizing current sensing atomic force microscopy ͑CSAFM͒. The dimensions of the dots were strongly dependent on the bias applied, scan rate, and potential pulse duration. By controlling these variables, the minimum size nanodots with full width at half maximum of 35 nm was achieved. Immediately after pattern formation, the electrical properties of the Ta oxide nanodots were measured using CSAFM. The charge transport at the CSAFM tip and the nanosized Ta oxide dot can be described by Poole-Frenkel type conduction. The relative dielectric constant of the nanosized Ta 2 O 5 dots was calculated to be 17. 8 -24.3, showing that the quality of the oxide was high. In addition, by controlling the substrate bias applied, pulse duration, and tip scan speed, nanosized Ta oxide lines with the desired dimensions were prepared.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

Kim¹,

Zhao²,

Uosaki³

2003

Journal of Applied Physics

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“…The difference is attributed to the amorphous nature of deposited thin films leading to lower densities compared to their bulk counterparts. To account for this variation, DEs were calculated for the same material pair using various theoretical and experimental densities given in the literature for amorphous thin films [49][50][51][52][53][54][55][56]. The mean calculated DE as well as the corresponding standard deviations are shown in Fig.…”

Section: Diffraction Efficiency At Soft X-raysmentioning

confidence: 99%

Multilayer Fresnel zone plates for high energy radiation resolve 21 nm features at 12 keV

Keskinbora¹,

Robisch²,

Mayer³

et al. 2014

Opt. Express

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X-ray microscopy is a successful technique with applications in several key fields. Fresnel zone plates (FZPs) have been the optical elements driving its success, especially in the soft X-ray range. However, focusing of hard X-rays via FZPs remains a challenge. It is demonstrated here, that two multilayer type FZPs, delivered from the same multilayer deposit, focus both hard and soft X-rays with high fidelity. The results prove that these lenses can achieve at least 21 nm half-pitch resolution at 1.2 keV demonstrated by direct imaging, and sub-30 nm FWHM (fullpitch) resolution at 7.9 keV, deduced from autocorrelation analysis. Reported FZPs had more than 10% diffraction efficiency near 1.5 keV. ©2014 Optical Society of AmericaOCIS codes: (340.7460) X-ray microscopy; (340.0340) X-ray optics; (340.6720) Synchrotron radiation; (340.7480) X-rays, soft x-rays, extreme ultraviolet (EUV); (050.1965) Diffractive lenses; (220.4241) Nanostructure fabrication. References and links1. J. Vila-Comamala, Y. Pan, J. J. Lombardo, W. M. Harris, W. K. S. Chiu, C. David, and Y. Wang, "Zonedoubled Fresnel zone plates for high-resolution hard X-ray full-field transmission microscopy," J. Synchrotron Radiat. 19(5), 705-709 (2012). 2. E. Zschech, C. Wyon, C. E. Murray, and G. Schneider, "Devices, materials, and processes for nanoelectronics: characterization with advanced x-ray techniques using lab-based and synchrotron radiation sources," Adv. Eng. Mater. 13(8), 811-836 (2011 Schütz, "Fast spin-wave-mediated magnetic vortex core reversal," Phys. Rev. B 86(13), 134426 (2012). 5. J. Kirz and C. Jacobsen, "The history and future of X-ray microscopy," J. Phys. Conf. Ser. 186, 012001 (2009). 6. P. Kirkpatrick and A. V. Baez, "Formation of optical images by X-Rays," J. Opt. Soc. Am. 38(9), 766-774 (1948 International Journal of Optics 31(4), 403-413 (1984). 46. A. A. Michelson, Studies in Optics (Dover Publications, Incorporated, 1995. 47. G. R. Morrison, "Phase contrast and darkfield imaging in x-ray microscopy," Proc. SPIE 1741, 186-193 (1993).

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“…In addition, Ta 2 O 5 has a high refractive index [12], a large band-gap E g ≈4.2 eV and is almost absorption free in the wavelength range from 300 nm to 2.0 µm [13], allowing e.g. its use as antireflective coating for eyeglasses, solar cells and charge-coupled devices [14]. Furthermore, Ta 2 O 5 can be useful as corrosion resistant protective coating [15], as piezoelectric material [16] and in thin film sensors [14].…”

Section: Introductionmentioning

confidence: 99%

“…its use as antireflective coating for eyeglasses, solar cells and charge-coupled devices [14]. Furthermore, Ta 2 O 5 can be useful as corrosion resistant protective coating [15], as piezoelectric material [16] and in thin film sensors [14].…”

Section: Introductionmentioning

confidence: 99%

Time-resolved in situ investigations of reactive sputtering processes by grazing incidence X-ray absorption spectroscopy

Lützenkirchen‐Hecht

Frahm

2006

Surface Science

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Abstract:We have applied the time-resolved grazing incidence X-ray absorption fine structure technique to study in-situ the atomic short range order and the electronic structure of reactively sputter deposited thin films. Results obtained during the reactive deposition of amorphous Ta-pentoxide thin films deposited in oxygen containing atmospheres will be presented. A new calculation scheme for a detailed reflection mode EXAFS data analysis giving bond distances, coordination numbers and Debye-Waller factors is presented. The atomic short range structure of the amorphous Ta 2 O 5 thin films is compared to that of crystalline β-Ta 2 O 5 .

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Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

Cited by 640 publications

References 238 publications

Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

Formation and electric property measurement of nanosized patterns of tantalum oxide by current sensing atomic force microscope

Multilayer Fresnel zone plates for high energy radiation resolve 21 nm features at 12 keV

Time-resolved in situ investigations of reactive sputtering processes by grazing incidence X-ray absorption spectroscopy

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