Tantalum Suboxide Films with Tunable Composition and Electrical Resistivity Deposited by Reactive Magnetron Sputtering

Baker, Alexander A.; Engwall, A. M.; Aji, L. B. Bayu; Bae, J. H.; Shin, S. J.; Moody, J. D.; Kucheyev, S. O.

doi:10.3390/coatings12070917

Cited by 5 publications

(1 citation statement)

References 33 publications

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“…A short increase in the t ON injection time leads to a fast oxygen enrichment of the films and, consequently, they rapidly exhibit dielectric characteristics (transparent in the visible region and insulator). Baker et al [62] recently reported very similar results on tantalum oxide films prepared by changing the total sputtering pressure in the deposition chamber. They also brought to the fore an abrupt increase in resistivity with an oxygen enrichment of the films.…”

Section: Optical and Electrical Propertiesmentioning

confidence: 67%

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Martin,

Cote,

Gavoille

et al. 2023

Coatings

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Tantalum oxide thin films are deposited by DC reactive magnetron sputtering from a tantalum metallic target and argon + oxygen. The oxygen gas is pulsed during the deposition with a constant pulsing period T = 10 s, whereas the introduction time of the reactive gas, namely the tON injection time, is systematically changed from 0 to 100% of T. Therefore, composition of as-deposited TaOx films is continuously changed from pure metallic tantalum to the over-stoichiometric Ta2O5 material. Films adopt the body-centered cubic structure (metallic Ta) for the lowest tON injection time values (oxygen stoichiometry x < 1.0) and become amorphous for the longest ones. It is shown that the tON injection time is a key parameter to deposit either homogeneous tantalum oxides, or periodic Ta/TaOx multilayers with alternations close to 3 nm. Optical transmittance in the visible region of the film/glass substrate system and electrical conductivity vs. temperature both exhibit a gradual evolution from metallic (σ300K = 8.17 × 105 S m−1 with an opaque behavior) to semiconducting (σ300K = 1.97 × 103 S m−1 with a semi-transparent transmittance) and finally to dielectric properties (σ300K < 10−5 S m−1 for interferential films) as a function of the oxygen concentration in the films.

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Section: Optical and Electrical Propertiesmentioning

confidence: 67%

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Martin,

Cote,

Gavoille

et al. 2023

Coatings

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Advancements in tantalum based nanoparticles for integrated imaging and photothermal therapy in cancer management

Ifijen,

Christopher,

Lekan

et al. 2024

RSC Adv.

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Reactive co-sputtering of ternary Au–Ta–O films with tunable electrical resistivity

Shin

Aji

Engwall

et al. 2022

Applied Physics Letters

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Heavy-metal-based films with high electrical resistivity are needed for hohlraums for magnetically assisted inertial confinement fusion. Here, we study ternary Au–Ta–O films deposited by reactive direct-current magnetron co-sputtering from elemental Au and Ta targets in an oxygen containing atmosphere. By varying the O content, the electrical resistivity of films can be tuned in a wide range of [Formula: see text] [Formula: see text] cm. With increasing O content, a drastic increase in resistivity occurs at [Formula: see text] at. % of O, separating regimes with two different dominant conduction mechanisms attributed to metallic conduction through the Au–Ta alloy matrix (for [Formula: see text] at. % of O) and tunneling across insulating Ta2O5 layers separating conducting islands (for [Formula: see text] at. % of O). Post-deposition annealing at 300 °C leads to the segregation of Au into [Formula: see text]-nm islands, sharply decreasing the resistivity for films with [Formula: see text] at. % of O but not for the metal-like films with lower O content.

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Tantalum Suboxide Films with Tunable Composition and Electrical Resistivity Deposited by Reactive Magnetron Sputtering

Cited by 5 publications

References 33 publications

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Tantalum Oxide Thin Films Sputter-Deposited by Oxygen Gas Pulsing

Advancements in tantalum based nanoparticles for integrated imaging and photothermal therapy in cancer management

Reactive co-sputtering of ternary Au–Ta–O films with tunable electrical resistivity

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