Target-quality dependent crystallinity of sputter-deposited LiNbO3 films: Observation of impurity segregation

Akazawa, Housei

doi:10.1016/j.tsf.2009.04.032

Cited by 5 publications

(3 citation statements)

References 49 publications

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“…The crystal structure of the GaN:O film is influenced by the substrate structure, with the same c-plane orientation. The possible explanation for the obtained GaN:O crystal structure may be the features of magnetron sputtering itself, i.e., the energies of the sputtered atoms of a few eV [ 25 ], relatively high target-substrate distance during the process (12 cm) and sputtering from a high purity crystalline target [ 26 ]. The high kinetic energy of the sputtered atoms results in high atomic mobility on the substrate, which resulted in an increase in the mean free path and ultimately enhanced the nucleation and crystallization of the film.…”

Section: Resultsmentioning

confidence: 99%

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

et al. 2023

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One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n+-GaN:O films. We have developed a novel and simple method to obtain these films. The method is based on the room temperature magnetron sputtering of a single crystal bulk GaN target doped with oxygen. The n+-GaN:O films exhibit a polycrystalline structure with a crack-free surface and a free electron concentration of 7.4 × 1018 cm3. Ohmic contact to GaN:Si with n+-GaN:O sub-contact layer achieves specific contact resistance of the order of 10−5 Ωcm2 after thermal treatment. The obtained results are very promising for the development of the technology of a whole new class of ohmic contacts to n-GaN.

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Section: Resultsmentioning

confidence: 99%

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

et al. 2023

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“…Moreover, the Li concentration in their films decreased with the increase of the deposition pressure and partial oxygen pressure. The composition of films deposited by PLD and sputtering was highly dependent also on the target quality (single crystal, sintered ceramics, or pressed powder) . Furthermore, the phase composition was dependent on the substrate and its orientation .…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

“…To obtain c‐ axis textured LN films on Si substrates, different approaches have been used. The LN and LT films with pure c‐ axis texture was grown at optimized conditions by PLD, RF sputtering, sol–gel, and CVD . The film texture on SiO 2 /Si largely depended on the deposition temperature .…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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Electrical properties of amorphous films and crystallization of Li–Nb–O system on silicon

Sumets

Иевлев

Dybov

et al. 2019

J Mater Sci: Mater Electron

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Target-quality dependent crystallinity of sputter-deposited LiNbO3 films: Observation of impurity segregation

Cited by 5 publications

References 49 publications

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Electrical properties of amorphous films and crystallization of Li–Nb–O system on silicon

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Target-quality dependent crystallinity of sputter-deposited LiNbO3 films: Observation of impurity segregation

Cited by 5 publications

References 49 publications

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Electrical properties of amorphous films and crystallization of Li–Nb–O system on silicon

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications