TC-LIGBTs on the Thin SoI Layer for the High Voltage Monolithic ICs With High Current Density and Latch-Up Immunity

Zhu, Jun‐Jie; Sun, Weifeng; Dai, Wei; Zhang, Long; Shen-li, LU; Shi, Longxi; Yi, Yaohua; Zhang, Sen; Su, Wei

doi:10.1109/ted.2014.2357795

Cited by 12 publications

(2 citation statements)

References 9 publications

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“…1) to the P + emitter. Once the total hole current density flowing laterally beneath the region A reaches a critical value, the parasitic bipolar transistor that consists of the N + emitter, P‐body and N‐drift is activated [8]. In the proposed structure, negative voltage is applied to G2.…”

Section: Structure and Mechanismmentioning

confidence: 99%

500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity

et al. 2015

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A 500 V deep-oxide trench silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with improved short-circuit capability is proposed. The structure features dual trench gates: one gate (G1) extended to the buried oxide and the other gate (G2) arranged in the deep-oxide trench in the drift region. In the off-state, G2 acts as an emitter-side field plate to shield the lateral electric field from the collector side. In the on-state, negative voltage is applied to G2, leading to a hole inversion layer close to the deep-oxide trench. The hole inversion layer reroutes the hole current and provides an additional heat dissipation path. Experimental results show that the proposed structure exhibits high short-circuit immunity without degradation of the breakdown voltage. The short-circuit withstand time of the proposed structure is 1.55 times that of the conventional one, when the voltage of G2 is −5 V.

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Section: Structure and Mechanismmentioning

confidence: 99%

500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity

et al. 2015

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“…Lateral insulated gate bipolar transistor (LIGBT) is widely applied to power integrated circuits (ICs) due to its voltage control and low power dissipation. [1][2][3] On the one hand, the breakdown voltage (BV) is a key property for the LIGBT and it is improved by the trench oxide layer (TOL) technology. [4][5][6] On the other hand, the reverse conduction capability is another key property for the LIGBT, and the reverse conducting LIGBT (RC-LIGBT) is introduced to integrate the IGBT and the free-wheeling diode (FWD) into one monolithic chip.…”

Section: Introductionmentioning

confidence: 99%

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

Chen

Huang

et al. 2018

Chinese Phys. B

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A reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) with a trench oxide layer (TOL), featuring a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage (BV) is improved. Secondly, the vertical N-buffer layer increases the voltage drop V PN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.

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Low On-state Voltage and Latch-up Immunity Thin SOI LIGBT with Multi-Segmented Trench Gates

Yang

Luo

Sun

et al. 2019

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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TC-LIGBTs on the Thin SoI Layer for the High Voltage Monolithic ICs With High Current Density and Latch-Up Immunity

Cited by 12 publications

References 9 publications

500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity

500 V dual gate deep‐oxide trench SOI‐LIGBT with improved short‐circuit immunity

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

Low On-state Voltage and Latch-up Immunity Thin SOI LIGBT with Multi-Segmented Trench Gates

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