TCAD analysis of self heating in AlGaN/GaN HEMTs under pulsed conditions

Weatherford, T.R.; Wang, Y.; Tracey, Stephen

doi:10.1109/irws.2009.5383005

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…Therefore, self-heating is induced leading to thermal cross-talk (thermal coupling) between individual gate fingers. This effect becomes serious if it persists and leads to the degradation of device performance or an irreversible damage and this is compared with similar results in the literature using TCAD simulator tool according to Figure 7 and good agreement is achieved [44][45][46]. The thermal profile simulated by TLM method in two dimensions (2-D) is shown in Figure 6a.…”

Section: Simulation Results and Discussionsupporting

confidence: 64%

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Belkacemi

Hocine

2018

JLPEA

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A three-dimensional thermal simulation investigation for the thermal management of GaN-on-SiC monolithic microwave integrated circuits (MMICs) of consisting multi-fingers (HEMTs) is presented. The purpose of this work is to demonstrate the utility and efficiency of the three-dimensional Transmission Line Matrix method (3D-TLM) in a thermal analysis of high power AlGaN/GaN heterostructures single gate and multi-fingers HEMT SSPA (solid state power amplifiers). The self-heating effects induce thermal cross-talk between individual fingers in multi-finger AlGaN/GaN that affect device performance and reliability. Gate-finger temperature differences only arise after a transient state, due to the beginning of thermal crosstalk which is attributed to the finite rate of heat diffusion between gate fingers. The TLM method accounts for the real geometrical structure and the non-linear thermal conductivities of GaN and SiC in order to improve the realistic calculations accuracy heat dissipation and thermal behavior of the device. In addition, two types of heat sources located on the top of GaN layer are considered in thermal simulations: Nano-scale hotspot as a pulsed wave heat source under gate and micro-scale hotspot as a continuous wave heat source, between gate and drain. Heat diffusion however, occurs not only between individual gate fingers (inter-finger) in a multi-finger HEMT, but also within each gate finger (intra-finger). To compare results, a Micro-Raman Spectroscopy experience is conducted to obtain a detailed and accurate temperature distribution. Good agreement between the microscopic spectral measurement and TLM simulation results is observed by accepting an error less than 2.2% relative to a maximum temperature. Results show that the 3D-TLM method is suitable for understanding heat management in particular for microwave devices AlGaN/GaN HEMTs SSPA amplifier. TLM method helps to select and locates the expected hot spots and to highlight the need of thermal study pre-design in order to minimize the system-level thermal dissipation and lead therefore to higher reliability.

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Section: Simulation Results and Discussionsupporting

confidence: 64%

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Belkacemi

Hocine

2018

JLPEA

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Steady and Transient Thermal Simulation of GaN Devices for High-Speed Switching Applications

Ono¹,

Ciappa²,

Hiura³

et al. 2014

Journal of Japan Institute of Electronics Packaging

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Thermal simulations of gallium nitride (GaN)-based microwave and power devices in steady and transient states are presented. The temperature distributions in steady states and temperature variations in transient states are simulated using the finite element method (FEM). Foster-type equivalent thermal circuits are extracted from the transient thermal responses using the FEM. When the number of RC parallel circuits is larger than the number of layers in the devices, the equivalent thermal circuits enable the simulation in the time domain at switching frequencies on the order of MHz. Thermal simulation using those circuits for a switching operation shows that the temperature variations of the GaN-based microwave and power devices are 16.9°C and 1.7°C, respectively. This is due to the differences in the dissipated power density of the total area of the heat sources.

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TCAD analysis of self heating in AlGaN/GaN HEMTs under pulsed conditions

Cited by 2 publications

References 2 publications

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA

Steady and Transient Thermal Simulation of GaN Devices for High-Speed Switching Applications

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