TCAD: Present state and future challenges

Ma, Tingting; Moroz, Victor; Borges, Ricardo; Smith, Lee

doi:10.1109/iedm.2010.5703367

Cited by 11 publications

(9 citation statements)

References 3 publications

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“…Among these, the still most widely used tool is the drift-diffusion (DD) model, despite its relative simplicity in the charge transport description and, therefore, the limitations to which it is subject. Nevertheless, the comparatively low numerical intensity and the availability of reliable material parameter models still makes DD widely used [28], in particular for 3D simulations. The following discussion, therefore, is based assuming the DD model.…”

Section: Physics-based Ls Noise Modelingmentioning

confidence: 99%

Modeling and simulation of noise in transistors under large-signal condition

Bonani

Guerrieri

Ghione

et al. 2011

2011 21st International Conference on Noise and Fluctuations

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The paper reviews the current status of noise simulation and modeling for semiconductor devices (in particular, transistors) operated in large-signal (forced) conditions. From a practical standpoint, large-signal noise modeling is relevant in the simulation and design of analog components such as mixers and frequency multipliers. The specific features of cyclostationary noise are discussed, and the various modeling techniques are presented, including simulation strategies for evaluating the large-signal steady state within the framework of a physics-based model. Particular attention is given to the issue of microscopic noise scource modulation and frequency conversion, still an open problem in the case of 1/ noise not amenable to a superposition of more elementary (e.g. generation-recombination) sources. Starting from physics-based large-signal simulation techniques, the review also covers compact modeling strategies, where noise source modulation is even more involved and no general, deviceindependent strategy seems to provide correct results, but ad-hoc solutions have to be tailored on specific device classes.

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Section: Physics-based Ls Noise Modelingmentioning

confidence: 99%

Modeling and simulation of noise in transistors under large-signal condition

Bonani

Guerrieri

Ghione

et al. 2011

2011 21st International Conference on Noise and Fluctuations

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“…8,9 Traditional TCAD modeling is useful for individual transistors, while ab-initio modeling is useful for novel materials and unit *Address all correspondence to Brett Lowe, brett.lowe@lamresearch.com processes. 10 However, both approaches lack the necessary speed and large area modeling capability that is needed for predictive process development at advanced nodes. The use of virtual process modeling and metrology is also applicable to disruptive technology changes such as material changes or process flow changes that require fast turnaround understanding of any potential impacts to the process flow due to the disruptive technology change.…”

Section: Introductionmentioning

confidence: 99%

Review of virtual wafer process modeling and metrology for advanced technology development

Hargrove

Wen

Yim

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

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Semiconductor logic and memory technology development continues to push the limits of process complexity and cost, especially as the industry migrates to the 5 nm node and beyond. Optimization of the process flow and ultimately quantifying its physical and electrical properties are critical steps in yielding mature technology. The standard build, test, and wait model of technology development is a major contributor to time and cost overruns. The growing inability to characterize many of the subtle and complicated features and yield limiting factors of a given technology is another serious constraint. We demonstrate the use of process modeling, virtual wafer fabrication, and virtual metrology in process development of advanced logic and memory. Accurate and predictive process modeling, in combination with virtual metrology enables the characterization of any feature on any given structure, is becoming a key requirement in advanced technology development. Virtual fabrication also accelerates the semiconductor development cycle, by substituting limited and lengthy wafer-based experiments with fast, large-scale virtual design of experiment. Several applications of virtual process modeling and metrology are illustrated in 3D NAND, DRAM, and logic technology. These applications include studies of 3D NAND pillar etch alignment (including tilt, twist, and bowing), DRAM capacitor process window optimization, advanced FinFET logic pitch-walking, and BEOL performance optimization.

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“…Accordingly theoretically unsound device models that are empirically calibrated to give accurate results in a narrow set of device geometries will always be necessary in TCAD applications as long as theoretically sound models of the innately inhomogeneous regime take significantly longer to solve than quasi-homogeneous macroscopic models. And as long as theoretically sound models are much slower than macroscopic models, their role in TCAD applications will always be limited to determining tuning parameters for these empirical models, and providing insight and intuition into the physics of transport [13,19].…”

Section: Transport In the Innately Inhomogeneous Regimementioning

confidence: 99%

“…Despite the pragmatic workaround afforded by empirical models, speed improvements to theoretically sound models of the innately inhomogeneous regime are still incredibly valuable to the semiconductor industry. This is especially true in an environment where device designers are exploring complex 3−D designs with novel geometries that are constantly exposing novel physical effects [19]. This trend means more and more theoretically sound simulations are required, both to understand this novel physics and to recalibrate theoretically unsound empirical models that are only narrowly reliable by their very nature.…”

Section: Transport In the Innately Inhomogeneous Regimementioning

confidence: 99%

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Simplifying Semiclassical Electron Transport in Highly Inhomogeneous Fields

Minnee¹

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The Boltzmann transport equation describes the dynamics of electrons via the time evolution of a 6-D scalar field. This semiclassical description is valid in any device where the external field is relatively constant over the decoherence length. Near equilibrium, the electron distribution can be characterized by a local chemical potential and the lattice temperature, leading to a simplified electron state described by a 3-D scalar field. When external fields are large, this approximation breaks down as the electrons are accelerated far away from a lattice temperature thermal equilibrium. If the external field is quasi-homogeneous, the local field or average kinetic energy can be used to characterize the shape of the distribution function, leading to an electron state described by one or two 3-D scalar fields. However, if the external field is not quasi-homogeneous, there is currently no significant simplification of the Boltzmann transport equation that is widely accepted as being theoretically sound.

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TCAD: Present state and future challenges

Cited by 11 publications

References 3 publications

Modeling and simulation of noise in transistors under large-signal condition

Modeling and simulation of noise in transistors under large-signal condition

Review of virtual wafer process modeling and metrology for advanced technology development

Simplifying Semiclassical Electron Transport in Highly Inhomogeneous Fields

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