TCAD simulation of the mixed irradiated n-MCz Si detector: Impact on space charges, electric field distribution

Srivastava, A. K.; Saini, Nitu; Chatterjee, Puspita; Michael, Thresia; Patyal, Shilpa

doi:10.1016/j.nima.2023.168031

Cited by 2 publications

(5 citation statements)

References 9 publications

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“…Figure 3(b) and figure 3(c) show the linear increase of 𝑉 FD with the proton irradiation fluences:2 × 10 14 , 5 × 10 14 and 8 × 10 14 n eq cm −2 for 300 μm and 100 μm n-Fz DSSSD,calculated at −20 • C. The experimental uncertainties in the results were within ±10% [16]. When the detectors are exposed to proton fluences, defects/traps introduced in the bandgap of the detector.…”

Section: Influence On Full Depletion Voltage Of the Non-irradiated An...mentioning

confidence: 78%

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Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Chatterjee,

Srivastava

2024

J. Inst.

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Radiation hard Double Sided Silicon Strip Detectors are used at the Silicon Tracker for the detection of two-dimensional position andenergy measurement of the incident protons in the R3B experiment at FAIR. Double Sided Silicon Strip Detectors were fabricated by Micron Semiconductor Ltd., U.K. and the first set of experimental measurements havebeenperformed on the non-irradiated detectors in order to understand the macroscopic performance of the detectors for the tracker. This study is extended to the performance of the irradiated detectors in the proton radiation environmentusing proton radiation damage model. The detectors were irradiated with 23 MeV protons up to an expected fluence of 8 × 1014 neq cm-2, which is one order higher than expected fluence at an initial phase0 of the experiment. The performance characteristics of the detectors on the full depletion voltage, leakage current, and charge collection efficiency were extrapolated using SRH and CCE modelling, which is usually implemented in device TCAD. The results on the detectors were compared with the available experimental data on the detectors. A very good comparison between experimental data and calculated resulthave been recorded for non-irradiated and irradiated detectors. The agenda is to propose a proton radiation hard Double Sided Silicon Strip Detector design on the basis of the present study for the phase 1 upgrade of the experiment.

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Section: Influence On Full Depletion Voltage Of the Non-irradiated An...mentioning

confidence: 78%

“…To investigate the impact of proton radiation damage effects on the DSSSD, the experimentally verified deep trap proton radiation damage models were employed. These models were implemented into SRH calculation, leading to the extraction of the macroscopic behaviour of the detector [15,16].…”

Section: Jinst 19 P05049mentioning

confidence: 99%

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Chatterjee,

Srivastava

2024

J. Inst.

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“…We know that the Dose (rad) = Fluence * LET * 1.6 x 10 -8 (7) where LET is energy absorbed in cancer tissues per unit length. For the proton dose in (rad/Gy) for the different energy of the proton beams, the proton fluencies (p/cm 2 ) can be extracted from (7). For Multiple Coulomb Scattering (MCS) leads to a lateral broadening of the beam as a function of depth.…”

Section: Total Proton Accumulated Dose: Impact Of Proton Energy On Rspmentioning

confidence: 99%

“…This can be controlled by cooling of the detector, or reducing the dose to the detector. To find the detector that can operate the detector up to 800V with fast response of the system, we need a prime material n/p-MCz for the pCT system [6][7].…”

Section: Leakage Current As a Function Of The Proton Fluenciesmentioning

confidence: 99%

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Study of Proton Radiation Damage Effects in Si microstrip Detector for New and Fast Tracking System of pCT

Kaur,

Srivastava

2023

J. Phys.: Conf. Ser.

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A new and fast radiation hard p-Si micro strip detector requires for the high proton imaging performance using the Proton Computed Tomography (pCT) system. Silicon trackers of the pCT have been measured the actual proton dose delivered to the cancer patient during the medical treatment. In this paper, several proton cancer doses up to 9.62x 1014 neq,/cm2 are used for the SRH modelling of the full depletion voltage and leakage current at 293 K of the Si micro-strip detector using microscopic radiation damage model. Radiation hard thin (150μm) p-type MCz Si micro strip detector design is proposed for the pCT that can work up to 800V for very high-irradiated proton cancer doses.

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TCAD simulation of the mixed irradiated n-MCz Si detector: Impact on space charges, electric field distribution

Cited by 2 publications

References 9 publications

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Investigation of proton radiation damage effects on the n-Fz DSSSD for the Phase I Upgrade of new Si Tracker at the R3B experiment

Study of Proton Radiation Damage Effects in Si microstrip Detector for New and Fast Tracking System of pCT

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