TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation

Zerarka, M.; Austin, P.; Bensoussan, A.; Morancho, F.; Durier, A.

doi:10.1109/radecs.2016.8093202

Cited by 2 publications

(1 citation statement)

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“…It can be found that the I DS, trans tends to be saturated with the increase of LET value. The current saturation indicates that the charge generated by these larger LET in the device structure has a saturation value [37]. From this phenomenon, no matter how the LET value is set, the peak value of the I DS, trans will not continue to increase.…”

Section: Device Single Event Effect and Discussionmentioning

confidence: 99%

Analysis and simulation of bulk polarization mechanism in p-GaN HEMT with AI component gradient buffer layer

Liu,

Wang,

Fei

et al. 2024

Semicond. Sci. Technol.

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In this paper,bulk polarization mechanism and radiation simulation of the Al component gradient buffer layer (GBL) and constant buffer layer (CBL) of p-GaN HEMT (p-GaN GBL-HEMT and p-GaN CBL-HEMT) are analyzed and studied. It is found that the p-GaN GBL-HEMT can significantly reduce the buffer leakage current. The linear gradient amplitude (the range of linear gradients of Al components vertically in the buffer) of 20~30% Al components can significantly increase the breakdown voltage (VBK) of the device, up to 1312V. Simultaneously, although the p-GaN GBL-HEMT reduces the 2DEG concentration, the device still has a specific on-resistance (RON,sp) and drain saturation current (IDS,sat) equivalent to the p-GaN CBL-HEMT due to the conductivity modulation effect. Its Baliga figure of merit is up to 2.27 GW/cm2. Finally, through the SEE simulation and the bulk polarization mechanism analysis, it is found that the drain transient current (IDS,trans) by the identical incident particles in the p-GaN GBL-HEMT is lower than that in the p-GaN CBL-HEMT, and the IDS,trans decreases with the increase of the Al components gradient amplitude. Therefore, the p-GaN GBL-HEMT provides a new idea for improving the electrical performance and SEE hardening.

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Section: Device Single Event Effect and Discussionmentioning

confidence: 99%