TCAD simulation studies of novel geometries for CZT ring-drift detectors

Maneuski, D.; Gostilo, V.; Owens, A.

doi:10.1088/1361-6463/ab49b1

Cited by 5 publications

(3 citation statements)

References 20 publications

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“…The above discussion illustrates that in the case of x-CSI detectors there are competing demands on pixel size, such that deciding which of two pixel geometries is better for a given application is difficult to solve with a purely analytical approach. Further, whilst optimisation of pixel geometries for a variety of medical scanners using Monte Carlo simulations has been reported before for a variety of detectors [13][14] [15], the case of x-CSI detectors is more complicated as the presence or absence of a CSCA can make a large difference to the detector performance.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Spectral X-Ray Photon Counting Detector Parameters on Detector Performance: Thickness and Pitch

2020

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The design of photon counting spectral imaging (x-CSI) x-ray detectors involves optimising many parameters including pixel thickness, pitch, and type of charge sharing correction algorithm (CSCA) employed, if any. The optimal value for one parameter depends on the other parameter values, as well as extrinsic variables such as application specific photon fluxes and energies of interest. No analytical approaches currently exist for optimising these parameters simultaneously. This work thus utilised our inhouse simulation framework, combining Monte Carlo and finite element methods to systematically simulate the response of 715 different CdTe based x-CSI detectors, comprising 13 different CSCAs, 5 different pixel thicknesses (1 mm-3 mm), and 11 different pixel pitches (100 µm-600 µm). Detector response to monoenergetic irradiation at 80 keV at 4 different fluxes was assessed using a range of metrics. Due to its complexity, the analysis of this work is divided into several publications, with this one focusing on the effects of pixel pitch and thickness. We were able to identify, and provide mechanistic explanations for, general trends in detector performance with varying pixel geometry that will be of interest to x-CSI detectors designers. Superficially similar spectral metrics were found to vary significantly in their sensitivity to different charge sharing mechanisms, underlining the importance of carefully selecting the evaluation metric for photon counting detectors based on their application. The parameters used here were selected based on our own interests, however this work demonstrates the utility of this framework for optimising x-CSI detector parameters for various spectral applications.

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Section: Introductionmentioning

confidence: 99%

The Effects of Spectral X-Ray Photon Counting Detector Parameters on Detector Performance: Thickness and Pitch

2020

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“…To reconstruct the real material resistivity, three shallow acceptor levels (0.023, 0.29, 0.48 eV) representing inherent material defects and one deep donor level (0.83 eV) responsible for the compensation mechanism were adopted. [ 18 ] During the simulation, the platinum (Pt) electrode with work function of 5.6 eV was deposited, [ 19 ] and the bias voltage at cathode was set to 100 V.…”

Section: Modeling and Experimentsmentioning

confidence: 99%

Effect of Ar Plasma Treatment on the Interface and Performance of CdZnTe Detectors

Cao

Zhang

Wang

et al. 2023

Cryst. Res. Technol.

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The performance of CdZnTe detectors is not only influenced by the growth of crystal, but also by the quality of the interface layer between the crystal and the electrode. A model of CdZnTe detector with metal–semiconductor–metal structure is developed to investigate the effects of the interface on the space charge and electric field distribution. Atomic force microscopy, current–voltage (I–V) analysis, and energy spectra under 241Am irradiation are adopted to investigate the effects of argon (Ar) plasma treatment on the interface and performance of CdZnTe detectors experimentally. The simulation results show that the interface layer with low density of surface state and thin thickness can form a more uniform space charge and electric field distribution. Due to the decrease of voltage drop across the interface, the leakage current at 200 V of CdZnTe detector with Ar plasma treatment is reduced from 159 to 44 nA cm−2, and the full‐width at half‐maximum under 241Am is improved from 9.3% to 8.2%, as compared to conventional Br‐MeOH treatment.

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“…The Silvaco TCAD simulation technique has high simulation accuracy, which has outstanding advantages in semiconductor device performance simulations. [11][12][13][14] So in the present research, the Silvaco TCAD simulation technique is applied to simulate the space charge distribution in CdZnTe crystal before and after sub-bandgap illuminations. The influences of the sub-bandgap illumination on the defect level occupation fraction, space charge, and internal electric field distributions are investigated systematically.…”

Section: Introductionmentioning

confidence: 99%

Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector*

Guo¹,

Lin²,

Liu³

et al. 2021

Chinese Phys. B

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The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors. The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation. The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8 × 10−8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals. The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination, thus space charge concentration can be reduced under the bias voltage of 500 V. A flat electric field distribution is obtained, which significantly improves the charge collection efficiency of the CdZnTe detector. Meanwhile, premised on the high resistivity of CdZnTe crystal, the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1 × 10−7 W/cm2 illumination. The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.

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TCAD simulation studies of novel geometries for CZT ring-drift detectors

Cited by 5 publications

References 20 publications

The Effects of Spectral X-Ray Photon Counting Detector Parameters on Detector Performance: Thickness and Pitch

The Effects of Spectral X-Ray Photon Counting Detector Parameters on Detector Performance: Thickness and Pitch

Effect of Ar Plasma Treatment on the Interface and Performance of CdZnTe Detectors

Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector*

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