Te Shallow Donor Solubility Mechanism in GaAs

Słupiński, T.; Zielińska‐Rohozińska, E.; Harasimowicz, T.

doi:10.12693/aphyspola.90.1080

Cited by 4 publications

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“…It was already reported that an annealing cauSes reverSible changes of the free electron concentration in sufficiently highly doped n-GaAs [12,13]. Here similarly reversible changes of DXS are reported.…”

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confidence: 67%

“…They were annealed at temperatures from the range Τ = 700-12000C for 0.1-400 hours in quartz ampoules under vacuum and quenched in water. An annealing at a given temperature Τ was conducted for time long enough to establish a stationary (equilibrium) state of the crystal structure at T, this equilibrium was then frozen by a rapid cooling [13]. We assume that the temperature of annealing is a good measure of the structural state of the sample during measurements at room temperature (RT).…”

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confidence: 99%

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First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

Słupiński

Zielińska‐Rohozińska

1997

Acta Phys. Pol. A

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Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related 1attice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.PACS numbers: 61.72.-y, 61.10.-i, 71.55.-i Highly doped semiconductors are routinely approximated by ideal solid solutions. Many experimental phenomena not consistent with such a model are accounted by introducing point defects (e.g. vacancies) and treating a semiconductor as double ideal solution. Here we briefly present X-ray scattering arguments that highly doped GaAs:Te exhibits properties of nonideal solid solution, i.e. one with spatial correlations of solute atoms.In the investigations of critical phenomena the scattering experiments supply the fundαmentαl information on microscopic correlations, order parameters and fluctuations [1,2]. Measurements of the critical scattering [3], with its intensity dependence on temperature of the type I α (Τc -T)x, Τ is a critical temperature and x a certain index, allowed to derive many well-known conclusions on phase transitions [1,2]. The best known are the density fluctuations which occur close to gas-liquid critical point, detected by light scattering (critical opalescence). Another one is neutron scattering detection of the order of atomic magnetic moments, which occurs in a ferromagnet when Curie temperature is approached from above.

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confidence: 67%

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confidence: 99%

First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

Słupiński

Zielińska‐Rohozińska

1997

Acta Phys. Pol. A

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“…The samples studied in the present work were LEC Te-doped, (001) or (110) oriented slices of GaAs, cut off as adjacent wafers from the bulk crystal. They were all subjected to the same three-step annealing process: 1150 • C for 2 h plus quenching, 700 • C for 74 h plus quenching and 700 • C for 287 h plus quenching (see also [16] for details). High-resolution x-ray diffraction reciprocal space maps were measured using the Philips MRD diffractometer set for 440 reflections Cu Kα 1 radiation.…”

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confidence: 99%

X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals

Borowski¹,

Gronkowski²,

Zielińska‐Rohozińska³

et al. 1998

J. Phys. D: Appl. Phys.

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Diffuse scattering of x-rays is applied to studies of microdefects in annealed highly doped crystals of GaAs:Te. X-ray diffraction reciprocal space mapping was performed by high-resolution x-ray diffractometry in the triple-axis mode. The most characteristic feature of the experimental maps is the lack of the zero-intensity lines for all high-symmetry reflections. Owing to this aspect of measured maps it was possible to determine the type of microdefects. The computer simulations performed for point defects with orthorhombic symmetry in annealed crystals of GaAs fit very well to the patterns of measured iso-intensity contours. The experimental data obtained so far give the possibility of determining the displacement field outside the defect core but are not sufficient to obtain information about the interior of the defect. The mean radius of microdefects was estimated to be smaller than 0.2 m.

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Characterization of microdefects in GaAs crystals with high-resolution X-ray diffractometry

et al. 1997

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The aim of the present work was to correlate the electric characteristics of Te-doped gallium arsenide grown by LEC technique with the defect contents of the samples. Measurements for GaAs samples, doped with Si, Ge and Ge+Te as well as undoped ones, grown by various methods (HB, VGF and LEC), were also performed. In order to characterize the defects High Resolution X-Ray Diffractometry was used. Measurements of diffuse scattering intensity maps around the reciprocal lattice points and plane wave reflection topography were employed. For most cases in the range of free-electron concentrations between 1-1017 cm 3 and 6.10 TM cm -~ (as well as for SI samples) the isointensity contours in the maps exhibit generally the same character. For higher doping level the intensity of X-ray diffuse scattering increases and it can be further increased by the annealing which causes a decrease of free-electron concentration. Ah analysis of the reciprocal-space maps is presented. Several types of defects should be considered in order to describe isointensity contours. PACS 61.10 -X-ray diffraction and scattering. PACS 61.72. -Defects and impurities in crystals; microstructure. PACS 01.30.Cc -Conference proceedings.

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Te Shallow Donor Solubility Mechanism in GaAs

Cited by 4 publications

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First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs

X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals

Characterization of microdefects in GaAs crystals with high-resolution X-ray diffractometry

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