2001
DOI: 10.1016/s0022-3093(01)00609-3
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TEA CO2 pulsed laser deposition of silicon suboxide films

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Cited by 19 publications
(8 citation statements)
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“…For comparison in Fig. 5(c) a FTIR spectrum of the film deposited by ablation of SiO in vacuum [32] is shown.…”
Section: Resultsmentioning
confidence: 99%
“…For comparison in Fig. 5(c) a FTIR spectrum of the film deposited by ablation of SiO in vacuum [32] is shown.…”
Section: Resultsmentioning
confidence: 99%
“…If several different fits were possible then the fit yielding the best agreement with superficial stoichiometry was considered as correct. The used fitting procedures as well as the assignments of individual oxidation states of Si were the same as described in literature [18,19]. Quantification of the surface concentrations of elements was accomplished by correcting the areas of photoelectron peaks for sensitivity factors.…”
Section: Methodsmentioning
confidence: 99%
“…In contrast to this oxygen containing environment IR laser-induced TiO deposition 51 and IR laser-or heat-induced SiO deposition 52,53 in the complete absence of oxygen afford films with stoichiometry equal to TiO and close to SiO. Originally, the amorphous SiO phase undergoes laserinduced SiO → Si + SiO 2 disproportionation [54][55][56] via an O atom transfer within Si(O n Si 4−n ) (n = 0-4) units 53 which is confirmed by the detection of Si, nano-Si and SiO 2 phases in residual particles. Monoclinic TiO undergoes partial oxidation and transition to rutile and anatase phases as a product of air oxidation and surface oxidation occurring during LAL in ethanol.…”
Section: Papermentioning
confidence: 99%