Technical note: Design and performance of a movable post-cathode magnetron sputtering system for making PBFA II accelerator ion sources

Mattox, Donald M.; Cuthrell, R. E.; Peeples, C.R.; Dreike, P. L.

doi:10.1016/0257-8972(87)90207-6

Cited by 13 publications

(4 citation statements)

References 14 publications

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“…The figure shows the pumpdown cycle of the system shown in Fig. [57] The system was roughed-down using a mechanical pump followed by cryosorption pumps. [57] The system was roughed-down using a mechanical pump followed by cryosorption pumps.…”

Section: In Situ "Conditioning" Of Vacuum Surfacesmentioning

confidence: 99%

The Low-Pressure Gas and Vacuum Processing Environment

Mattox¹

1998

Handbook of Physical Vapor Deposition (PVD) Processing

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Section: In Situ "Conditioning" Of Vacuum Surfacesmentioning

confidence: 99%

The Low-Pressure Gas and Vacuum Processing Environment

Mattox¹

1998

Handbook of Physical Vapor Deposition (PVD) Processing

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“…The post cathode magnetron sputter deposition system used in this study has been described previously [18).…”

Section: Introductionmentioning

confidence: 99%

Residual Stress, Fracture, and Adhesion in Sputter-Deposited Molybdenum Films

Mattox

Cuthrell

1988

MRS Proc.

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Atomistically deposited films may form with high residual stresses which may be either tensile or compressive in nature.These film stresses represent stored strain energy which may affect the adhesion of the filmsubstrate couple and in the limit may cause spontaneous fracture at or near the film-substrate interface (loss of adhesion).In the post cathode magnetron sputter deposition of molybdenum films, we have found that the intrinsic film stresses are generally anisotropic and may easily exceed the fracture or adhesive strength of the film-substrate couple.The residual stress anisotropy in the film is dependent on the orientation with respect to the post cathode and the magnitude and nature of the stresses are very dependent on the deposition conditions, particularly gas pressure during sputtering.By using a pressure-cycling technique, we have deposited thick (5 microns) films of molybdenum which have little residual stress or stress anisotropy.

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“…The working pressure can be decreased due to the increased plasma density, resulting in decreased collisional energy loss of the target bombarding ions in the gas phase, and thus enhanced sputtering rates. [38] A simple schematic drawing of a magnetron sputtering setup is shown in Fig. 2.1.…”

Section: Magnetron Sputteringmentioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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Amorphous silicon oxynitride (SiO x N y ) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N 2 O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si−Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO 2 and Si 3 N 4 .iii iv Acknowledgments

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Technical note: Design and performance of a movable post-cathode magnetron sputtering system for making PBFA II accelerator ion sources

Cited by 13 publications

References 14 publications

The Low-Pressure Gas and Vacuum Processing Environment

The Low-Pressure Gas and Vacuum Processing Environment

Residual Stress, Fracture, and Adhesion in Sputter-Deposited Molybdenum Films

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

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