Technique for 25 nm x-ray nanolithography

The extendibility of x-ray lithography is limited by the usable proximity gap. The gap is considered to be larger than 10 μm. Practically, a line and space (L/S) pattern of 70 nm linewidth and 140 nm pitch can be formed at a 10 μm gap using a 1:1 exposure mask (1× mask). If a double-pitch mask (2× mask), whose L/S pitch is twice as large as desired what to be printed on the wafer, is used while applying double exposures, the gap can be expanded greatly. A simulation result showed that using a 2× mask, a gap of more than 1000 μm can be used to form a L/S pattern of 200 nm pitch. An exposure test at a gap of 160 μm using the 2× mask proved sufficient to form the L/S pattern of 200 nm pitch. The principle of symmetric illumination explains this result well. The principle is also applicable to two-dimensional pattern formation, for which we propose a concept of mask design, i.e., the symmetric-illumination mask (SIM). Multidot images formed by the SIMs can produce mega- or giga-unit patterns of less than 25 nm linewidth by applying continuous writing.

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“…6 Figure 5͑a͒ shows a 2ϫ mask of 400ϫ800 nm 2 pitch for a grating pattern. Here we note the widthwise ͑aside from lengthwise͒ image formation.…”

Section: Formation Of Two-dimensional Patternmentioning

confidence: 99%

Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

Toyota

Washio

Watanabe

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Patterning with sub 100-nm resolution using a single layer of deep-UV photoresist (175 nm thick) has also been demonstrated (by using Sandia’s 10x-Microstepper Extreme ultraviolet (EUV) imaging system) [33]. At even shorter X-ray wavelengths of light, photolithography was used to fabricate structures as small as 50 nm and at a limit even sub-30 nm [34–36]. Researchers at ENEA Frascati Research Center in 2008 reported the fabrication of structures with less than 90 nm using EUV at 14.4 nm [37, 38].…”

Section: Fabricationmentioning

confidence: 99%

Patterned Plasmonic Surfaces—Theory, Fabrication, and Applications in Biosensing

Chorsi

Zhu

Zhang

2017

J. Microelectromech. Syst.

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Low-profile patterned plasmonic surfaces are synergized with a broad class of silicon microstructures to greatly enhance near-field nanoscale imaging, sensing, and energy harvesting coupled with far-field free-space detection. This concept has a clear impact on several key areas of interest for the MEMS community, including but not limited to ultra-compact microsystems for sensitive detection of small number of target molecules, and “surface” devices for optical data storage, micro-imaging and displaying. In this paper, we review the current state-of-the-art in plasmonic theory as well as derive design guidance for plasmonic integration with microsystems, fabrication techniques, and selected applications in biosensing, including refractive-index based label-free biosensing, plasmonic integrated lab-on-chip systems, plasmonic near-field scanning optical microscopy and plasmonics on-chip systems for cellular imaging. This paradigm enables low-profile conformal surfaces on microdevices, rather than bulk material or coatings, which provide clear advantages for physical, chemical and biological-related sensing, imaging, and light harvesting, in addition to easier realization, enhanced flexibility, and tunability.

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“…8,9 The spectrum used for the simulations used in this study is shown in Fig. 1, where the ''hard'' spectrum with E m Ϸ2.64 keV is shown along with the ''medium'' and ''soft'' spectra with E m ϭ2.0 and 1.4 keV, respectively.…”

Section: Diffraction At Higher Energiesmentioning

confidence: 99%

Can proximity x-ray lithography print 35 nm features? Yes

Khan

Han

Tsvid

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report on the results of our effort to extend proximity x-ray lithography (PXL) to 35 nm using a harder energy spectrum, and choosing the appropriate materials for the mask and the resist to match the transmission and absorption at higher energies. Previous studies [M. Kahn et al., J. Vac. Sci. Technol. B 17, 3426 (1999); T. Kitayama, J. Vac. Sci. Technol. B 18, 2950 (2000)] have shown that PXL is capable of printing 50 nm features, and in this study, we extend that work to show that PXL can indeed be used for 35 nm generation. We investigate the use of higher energy radiation, in conjunction with novel resist materials, to deliver the 35 nm node and provide a set of requirements to achieve that goal.

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Technique for 25 nm x-ray nanolithography

Cited by 14 publications

References 14 publications

Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

Patterned Plasmonic Surfaces—Theory, Fabrication, and Applications in Biosensing

Can proximity x-ray lithography print 35 nm features? Yes

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