Technique for Analyzing Volumetric Defects Using Digital Elevation Model of a Surface

Dedkova, A. A.; Florinsky, Igor V.; Gusev, E. E.; Dyuzhev, N. A.; Fomichev, M. Yu.; Shtern, M. Yu.

doi:10.1134/s1061830921110073

Cited by 7 publications

(3 citation statements)

References 34 publications

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“…Detection and detailed study of small undesirable inhomogeneities on the surface can be easily done using maps of morphometric variables, as they are functions of the first and second partial derivatives, which are very sensitive to small changes in elevation values. This issue is covered in detail in our previous papers (Dedkova, Florinsky, & Djuzhev, 2022b;Dedkova, Florinsky, Gusev, et al, 2021).…”

Section: Discussionmentioning

confidence: 98%

“…In recent studies, we demonstrated the high promise of geomorphometric modeling for the analysis and metrological control of microelectronic items (silicon wafers, wafer‐based structures, membranes, etc. ), that is, for analyzing DEMs with micro‐ and nanometer‐range resolution and elevation difference (Dedkova & Florinsky, 2022; Dedkova et al, 2023; Dedkova, Florinsky, & Djuzhev, 2022a, 2022b, 2022c; Dedkova, Florinsky, & Djuzhev, 2021; Dedkova, Florinsky, Gusev, et al, 2021).…”

Section: Introductionmentioning

confidence: 99%

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Geomorphometry and microelectronic metrology: Converged realms

Dedkova

Florinsky

2023

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This article discusses the application of geomorphometric methods in microelectronic metrology. Six typical microelectronic items were geomorphometrically analyzed using their digital elevation models with nano‐ and micrometer‐range resolution and elevation difference: (1) a silicon–quartz structure; (2) a mechanically polished silicon wafer; (3) a photovoltaic blend sample; (4) an X‐ray optical element (a fused quartz spherical concave substrate); (5) a Bosch process‐formed, 20 aluminum layered membrane; and (6) a silicon–glass assembly with a volumetric defect. Geomorphometric modeling increases significantly the visibility and informativeness of data presentation, allowing to identify effectively the spatial distribution of nano‐ and microforms of the surface of microelectronic items. Geomorphometric methods provide an opportunity to study the size, location, and characteristic features of nano‐ and microtopographic inhomogeneities of microelectronic items using maps of minimum, maximum, mean, and unsphericity curvatures as well as other morphometric variables.

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Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Geomorphometry and microelectronic metrology: Converged realms

Dedkova

Florinsky

2023

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“…Earlier, the authors described in detail the studies of the local shape features of wafers with films using Gaussian, mean and principal curvatures [27][28][29]. To study the process of changing the shape of wafers during the formation of films of various materials on their surface, it is also useful to use other morphometric variables.…”

Section: Investigation Of Changing the Shape Of Wafers With Filmsmentioning

confidence: 99%

Technique for investigation of the shape changes of wafers and thin-film membranes by using geomorphometric approaches

2022

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We discuss a technique for investigating changes in complex topography and shape of structures using geomorphometric methods to study surfaces of wafers and membranes formed by the Bosch process. The wafers were analyzed before and after the deposition of the SiO2 layer. The membranes were analyzed during the bulge testing. The study was carried out using maps of the catchment area and principal curvatures taking into account artifacts of the approximation of experimental data. We found a correspondence between the distribution of lines connecting the highest surface areas before and after the deposition of the SiO2 layer on the wafers. For membranes with structure: Al(0.8 μm)/SiO2(0.6 μm)/Al(1.1 μm), pSi*(0.8 μm)/SiNx(0.13 μm)/SiO2, Al(0.6 μm) we also found that features of membrane boundaries are mainly caused by their initial shape rather than change under the action of an applied pressure. The advantages of geomorphometric methods for studying changes in the shape of wafers and thin-film membranes in technological processes for the manufacturing of microelectronic devices are shown in comparison with traditional methods for analyzing surface topography maps. Keywords: thin films, membrane, defect, mechanical characteristics, mechanical stresses, deformation, deflection, strain, microelectromechanical systems, MEMS, circular membrane, silicon substrate, optical profilometry, overpressure, geomorphometry, Gaussian curvature, warpage, principal curvatures, wafer, bulge testing, bulging method, thin-layer coating, digital elevation models, DEM, surface, topography.

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