Technique for micro-machining millimetre-wave rectangularwaveguide

Collins, C.E.; Miles, R.E.; Pollard, R.D.; Steenson, D.P.; Digby, J.; Parkhurst, G.M.; Chamberlain, J.M.; Cronin, N. J.; Davies, S. R.; Bowen, James

doi:10.1049/el:19980665

Cited by 16 publications

(7 citation statements)

References 6 publications

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“…3. The loss demonstrated is mainly due to the join between the waveguide halves occurring in the narrow wall, nevertheless, the loss is significantly lower than for previously reported micro-machined waveguides [5], [6] and comparable to that reported for the single layer of SU-8 technique [9]. The two waveguide halves were disconnected and reconnected, and the measurements repeated; very little difference was observed in the measured -parameters which demonstrates the repeatability of this procedure.…”

Section: Heightsupporting

confidence: 65%

“…The measurements displayed a periodic ripple caused by multiple reflections between the full to reduced height waveguide junctions. The effect of these reflections was removed by renormalizing the measuredparameters to the characteristic impedance of the T-guide rather than the full height test port impedance [9]. In order to achieve this, both of these characteristic impedances need to be known; three-dimensional (3-D) electromagnetic field simulations were performed of both the T-guide and full- …”

Section: Measurement Technique and Resultsmentioning

confidence: 99%

“…A recently introduced negative photoresist (known as EPON SU-8 TM ) [8]) has been successfully used to micro-machine 700-m-high rectangular waveguides in a single UV exposure [9]. This Letter reports a new technique for the fabrication of micro-machined rectangular waveguides in two halves using multiple layers of SU-8 photoresist and presents some measured -parameter results.…”

mentioning

confidence: 99%

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A new micro-machined millimeter-wave and terahertz snap-together rectangular waveguide technology

Collins

Miles

Digby

et al. 1999

IEEE Microw. Guid. Wave Lett.

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A novel technique for micro-machining millimeter and submillimeter-wave rectangular waveguide components is reported. These are fabricated in two halves which simply snap together, utilizing locating pins and holes, and are physically robust, and cheap, and easy to manufacture. In addition, S S Sparameter measurements on these structures are reported for the first time and display lower loss than previously reported micro-machined rectangular waveguides.

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Section: Heightsupporting

confidence: 65%

Section: Measurement Technique and Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

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A new micro-machined millimeter-wave and terahertz snap-together rectangular waveguide technology

Collins

Miles

Digby

et al. 1999

IEEE Microw. Guid. Wave Lett.

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“…To extract the waveguide loss, the loss of each structure is calculated by using (4) and (5), then subtracted to obtain the loss attributed to the waveguide length only [38]…”

Section: Thb-filled Rectangular Waveguidementioning

confidence: 99%

“…With the rapid advancement of micro-fabrication technology, several fabrication techniques were proposed to introduce a wafer-level RWG to be integrated in planar form. Hybrid integration techniques using multiple wafer bondings have been primarily exercised to develop wafer-level RWGs [1][2][3][4][5]. The waveguides fabricated by these techniques are manufactured by manual congregation of two or more separate parts.…”

Section: Introductionmentioning

confidence: 99%

THB‐filled monolithic rectangular waveguides for millimeter wave applications

Vahabisani

Daneshmand

2014

IET Microwaves, Antennas & Propagation

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A monolithic wafer‐level dielectric‐filled rectangular waveguide for millimeter‐wave applications is designed and fabricated. Unlike the existing wafer‐level rectangular waveguides that are based on hybrid integration techniques to assemble the waveguide, the three‐step fabrication process of the proposed waveguide enables the simultaneous monolithic fabrication of the dielectric‐filled waveguide as well as planar circuitry on one substrate. The maximum temperature during the entire fabrication process stays lower than 200 °C which is desirable for integrated circuit (IC) fabrication. Besides, the RF performance of the presented waveguide only depends on the RF properties of the filling dielectric not the carrier substrate (as in the case of Substrate Integrated Waveguides), which makes it ideal for silicon micro‐fabrication technology. A negative‐tone thick photoresist called THB N151 which can reach a thickness of 90 μm by single spinning is used and characterised. The results show a relative permittivity of ɛr′ = 3 and a loss tangent of tanδ = 0.018 for THB 151 which surpasses the RF performance of the highly used SU8 photoresist. An average insertion loss of 0.21 dB/mm is measured for the THB‐filled waveguide for the frequency range of 35–50 GHz. To perform the wafer‐level measurements, the waveguide is integrated with CPW to rectangular transition. Furthermore, it has been illustrated that other monolithic waveguide structures such as Turn or Y‐junction can be potentially developed by using the proposed solution.

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